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BC857RA Dataheets PDF



Part Number BC857RA
Manufacturers nexperia
Logo nexperia
Description 100mA PNP/PNP general-purpose double transistors
Datasheet BC857RA DatasheetBC857RA Datasheet (PDF)

BC857RA 45 V, 100 mA PNP/PNP general-purpose double transistors 14 September 2018 Product data sheet 1. General description PNP/PNP general-purpose double transistors in a leadless ultra small DFN1412-6 (SOT1268) Surface-Mounted Device (SMD) plastic package. NPN/NPN complement: BC847RA NPN/PNP complement: BC847RAPN 2. Features and benefits • Reduces component count • Reduces pick and place costs • Low package height of 0.5 mm • AEC-Q101 qualified 3. Applications • General-purpose switching.

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BC857RA 45 V, 100 mA PNP/PNP general-purpose double transistors 14 September 2018 Product data sheet 1. General description PNP/PNP general-purpose double transistors in a leadless ultra small DFN1412-6 (SOT1268) Surface-Mounted Device (SMD) plastic package. NPN/NPN complement: BC847RA NPN/PNP complement: BC847RAPN 2. Features and benefits • Reduces component count • Reduces pick and place costs • Low package height of 0.5 mm • AEC-Q101 qualified 3. Applications • General-purpose switching and amplification • Mobile applications 4. Quick reference data Table 1. Quick reference data Symbol Parameter Per transistor VCEO collector-emitter voltage IC collector current ICM peak collector current hFE DC current gain Conditions open base single pulse; tp ≤ 1 ms VCE = -5 V; IC = -2 mA; Tamb = 25 °C Min Typ Max Unit -- --200 - -45 V -100 -200 450 mA mA Nexperia BC857RA 45 V, 100 mA PNP/PNP general-purpose double transistors 5. Pinning information Table 2. Pinning information Pin Symbol Description 1 E1 emitter TR1 2 B1 base TR1 3 C2 collector TR2 4 E2 emitter TR2 5 B2 base TR2 6 C1 collector TR1 7 C1 collector TR1 8 C2 collector TR2 Simplified outline 1 76 25 8 34 Transparent top view DFN1412-6 (SOT1268) Graphic symbol 654 TR2 TR1 123 sym018 6. Ordering information Table 3. Ordering information Type number Package Name BC857RA DFN1412-6 Description plastic thermal enhanced ultra thin small outline package; no leads; 6 terminals; body: 1.4 mm x 1.2 mm x 0.47 mm Version SOT1268 7. Marking Table 4. Marking codes Type number BC857RA Marking code A6 BC857RA Product data sheet All information provided in this document is subject to legal disclaimers. 14 September 2018 © Nexperia B.V. 2018. All rights reserved 2 / 11 Nexperia BC857RA 45 V, 100 mA PNP/PNP general-purpose double transistors 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Per transistor VCBO VCEO VEBO IC ICM IBM Ptot Per device Ptot Tj Tamb Tstg collector-base voltage collector-emitter voltage emitter-base voltage collector current peak collector current peak base current total power dissipation open emitter open base open collector single pulse; tp ≤ 1 ms Tamb ≤ 25 °C total power dissipation junction temperature ambient temperature storage temperature Tamb ≤ 25 °C Min [1] - [1] -55 -65 [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. 500 Ptot (mW) 400 aaa-024487 Max -50 -45 -6 -100 -200 -100 325 480 150 150 150 Unit V V V mA mA mA mW mW °C °C °C 300 200 100 0 -75 -25 25 75 125 175 Tamb (°C) FR4 PCB, standard footprint Fig. 1. Per device: Power derating curve BC857RA Product data sheet All information provided in this document is subject to legal disclaimers. 14 September 2018 © Nexperia B.V. 2018. All rights reserved 3 / 11 Nexperia BC857RA 45 V, 100 mA PNP/PNP general-purpose double transistors 9. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions Per transistor Rth(j-a) thermal resistance from in free air junction to ambient Per device Rth(j-a) thermal resistance from in free air junction to ambient [1] [1] [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. 103 Zth(j-a) (K/W) 102 duty cycle = 1 0.75 0.5 0.33 0.2 0.1 0.05 10 0.02 0.01 0 Min Typ Max Unit - - 385 K/W - - 261 K/W aaa-024488 1 10-5 10-4 10-3 10-2 10-1 FR4 PCB, standard footprint 1 10 102 103 tp (s) Fig. 2. Per transistor: Transient thermal impedance from junction to ambient as a function of pulse duration; typical values BC857RA Product data sheet All information provided in this document is subject to legal disclaimers. 14 September 2018 © Nexperia B.V. 2018. All rights reserved 4 / 11 Nexperia BC857RA 45 V, 100 mA PNP/PNP general-purpose double transistors 10. Characteristics Table 7. Characteristics Symbol Parameter Conditions Per transistor ICBO collector-base cut-off current VCB = -30 V; IE = 0 A; Tamb = 25 °C VCB = -30 V; IE = 0 A; Tj = 150 °C IEBO emitter-base cut-off VEB = -5 V; IC = 0 A; Tamb = 25 °C current hFE DC current gain VCE = -5 V; IC = -2 mA; Tamb = 25 °C VCEsat collector-emitter saturation voltage IC = -10 mA; IB = -0.5 mA; Tamb = 25 °C IC = -100 mA; IB = -5 mA; Tamb = 25 °C VBEsat VBE Cc base-emitter saturation IC = -10 mA; IB = -0.5 mA; Tamb = 25 °C voltage IC = -100 mA; IB = -5 mA; Tamb = 25 °C base-emitter voltage VCE = -5 V; IC = -2 mA; Tamb = 25 °C VCE = -5 V; IC = -10 mA; Tamb = 25 °C collector capacitance VCB = -10 V; IE = 0 A; ie = 0 A; f = 1 MHz; Tamb = 25 °C Ce emitter capacitance VEB = -0.5 V; IC = 0 A; ic = 0 A; f = 1 MHz; Tamb = 25 °C fT transition frequency VCE = -5 V; IC = -10 mA; f = 100 MHz; Tamb = 25 °C NF noise figure VCE = -5 V; IC = -0.2 mA; RS = 2 kΩ; f = 1.


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