Document
BC857RA
45 V, 100 mA PNP/PNP general-purpose double transistors
14 September 2018
Product data sheet
1. General description
PNP/PNP general-purpose double transistors in a leadless ultra small DFN1412-6 (SOT1268) Surface-Mounted Device (SMD) plastic package.
NPN/NPN complement: BC847RA NPN/PNP complement: BC847RAPN
2. Features and benefits
• Reduces component count • Reduces pick and place costs • Low package height of 0.5 mm • AEC-Q101 qualified
3. Applications
• General-purpose switching and amplification • Mobile applications
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Per transistor
VCEO
collector-emitter voltage
IC collector current ICM peak collector current hFE DC current gain
Conditions open base
single pulse; tp ≤ 1 ms VCE = -5 V; IC = -2 mA; Tamb = 25 °C
Min Typ Max Unit
--
--200 -
-45 V
-100 -200 450
mA mA
Nexperia
BC857RA
45 V, 100 mA PNP/PNP general-purpose double transistors
5. Pinning information
Table 2. Pinning information Pin Symbol Description 1 E1 emitter TR1 2 B1 base TR1 3 C2 collector TR2 4 E2 emitter TR2 5 B2 base TR2 6 C1 collector TR1 7 C1 collector TR1 8 C2 collector TR2
Simplified outline
1 76 25
8 34
Transparent top view
DFN1412-6 (SOT1268)
Graphic symbol
654
TR2 TR1
123
sym018
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
BC857RA
DFN1412-6
Description
plastic thermal enhanced ultra thin small outline package; no leads; 6 terminals; body: 1.4 mm x 1.2 mm x 0.47 mm
Version SOT1268
7. Marking
Table 4. Marking codes Type number BC857RA
Marking code A6
BC857RA
Product data sheet
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14 September 2018
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Nexperia
BC857RA
45 V, 100 mA PNP/PNP general-purpose double transistors
8. Limiting values
Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Per transistor
VCBO VCEO VEBO IC ICM IBM Ptot Per device Ptot Tj Tamb Tstg
collector-base voltage collector-emitter voltage emitter-base voltage collector current peak collector current peak base current total power dissipation
open emitter open base open collector
single pulse; tp ≤ 1 ms
Tamb ≤ 25 °C
total power dissipation junction temperature ambient temperature storage temperature
Tamb ≤ 25 °C
Min
[1] -
[1] -55 -65
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.
500 Ptot (mW)
400
aaa-024487
Max
-50 -45 -6 -100 -200 -100 325
480 150 150 150
Unit
V V V mA mA mA mW
mW °C °C °C
300
200
100
0 -75 -25 25 75 125 175
Tamb (°C)
FR4 PCB, standard footprint
Fig. 1. Per device: Power derating curve
BC857RA
Product data sheet
All information provided in this document is subject to legal disclaimers.
14 September 2018
© Nexperia B.V. 2018. All rights reserved
3 / 11
Nexperia
BC857RA
45 V, 100 mA PNP/PNP general-purpose double transistors
9. Thermal characteristics
Table 6. Thermal characteristics
Symbol
Parameter
Conditions
Per transistor
Rth(j-a)
thermal resistance from in free air junction to ambient
Per device
Rth(j-a)
thermal resistance from in free air junction to ambient
[1] [1]
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
103
Zth(j-a) (K/W)
102
duty cycle = 1
0.75 0.5
0.33 0.2
0.1 0.05
10 0.02
0.01
0
Min Typ Max Unit - - 385 K/W - - 261 K/W
aaa-024488
1 10-5
10-4
10-3
10-2
10-1
FR4 PCB, standard footprint
1
10 102 103 tp (s)
Fig. 2. Per transistor: Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
BC857RA
Product data sheet
All information provided in this document is subject to legal disclaimers.
14 September 2018
© Nexperia B.V. 2018. All rights reserved
4 / 11
Nexperia
BC857RA
45 V, 100 mA PNP/PNP general-purpose double transistors
10. Characteristics
Table 7. Characteristics
Symbol
Parameter
Conditions
Per transistor
ICBO
collector-base cut-off current
VCB = -30 V; IE = 0 A; Tamb = 25 °C VCB = -30 V; IE = 0 A; Tj = 150 °C
IEBO
emitter-base cut-off
VEB = -5 V; IC = 0 A; Tamb = 25 °C
current
hFE
DC current gain
VCE = -5 V; IC = -2 mA; Tamb = 25 °C
VCEsat
collector-emitter saturation voltage
IC = -10 mA; IB = -0.5 mA; Tamb = 25 °C IC = -100 mA; IB = -5 mA; Tamb = 25 °C
VBEsat VBE Cc
base-emitter saturation IC = -10 mA; IB = -0.5 mA; Tamb = 25 °C
voltage
IC = -100 mA; IB = -5 mA; Tamb = 25 °C
base-emitter voltage VCE = -5 V; IC = -2 mA; Tamb = 25 °C
VCE = -5 V; IC = -10 mA; Tamb = 25 °C
collector capacitance VCB = -10 V; IE = 0 A; ie = 0 A; f = 1 MHz; Tamb = 25 °C
Ce emitter capacitance VEB = -0.5 V; IC = 0 A; ic = 0 A; f = 1 MHz; Tamb = 25 °C
fT transition frequency VCE = -5 V; IC = -10 mA; f = 100 MHz; Tamb = 25 °C
NF noise figure VCE = -5 V; IC = -0.2 mA; RS = 2 kΩ; f = 1.