MJD32CA

MJD32CA 100 V, 3 A PNP high power bipolar transistor 23 November 2020 Product data sheet 1. General description PNP high power bipolar transistor in a power DPAK, TO-252 (SOT428C) Surface-Mounted Device (SMD) plastic package. NPN complement: MJD31CA 2. Features and benefits High thermal power dissipation capability High energy efficiency due to less heat generation Electrically similar to popular MJD32 series Low collector emitter saturation voltage Fast switching speeds AEC-Q101 qualified 3. Applications Power management Load switch Linear mode voltage regulator Constant current drive backlighting application Motor drive Relay replacement 4. Quick reference data Table 1. Quick reference data Symbol Parameter VCEO collector-emitter voltage IC collector current ICM peak collector current hFE DC current gain Conditions open base single pulse; tp ≤ 1 ms VCE = -4 V; IC = -1 A; Tamb = 25 °C VCE = -4 V; IC = -3 A; Tamb = 25 °C Min Typ Max Unit - - -100 V - - - - 25 - 10 - -3 A -5 A - 50 Nexperia MJD32CA 100 V, 3 A PNP high power bipolar transistor 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline 1 B base mb 2 C collector 3 E emitter mb C mounting base; connected to collector 2 1 3 DPAK (SOT428C) Graphic symbol E B C; mb aaa-029523 6. Ordering information Table 3. Ordering information Type number Package Name MJD32CA DPAK Description Plastic sin...