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MJD32C Dataheets PDF



Part Number MJD32C
Manufacturers nexperia
Logo nexperia
Description 3A PNP high power bipolar transistor
Datasheet MJD32C DatasheetMJD32C Datasheet (PDF)

MJD32C 100 V, 3 A PNP high power bipolar transistor 23 May 2019 Preliminary data sheet 1. General description PNP high power bipolar transistor in a power SOT428 Surface-Mounted Device (SMD) plastic package. NPN complement: MJD31C 2. Features and benefits • High thermal power dissipation capability • High energy efficiency due to less heat generation • Electrically similar to popular MJD32 series • Low collector emitter saturation voltage • Fast switching speeds 3. Applications • Power man.

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MJD32C 100 V, 3 A PNP high power bipolar transistor 23 May 2019 Preliminary data sheet 1. General description PNP high power bipolar transistor in a power SOT428 Surface-Mounted Device (SMD) plastic package. NPN complement: MJD31C 2. Features and benefits • High thermal power dissipation capability • High energy efficiency due to less heat generation • Electrically similar to popular MJD32 series • Low collector emitter saturation voltage • Fast switching speeds 3. Applications • Power management • Load switch • Linear mode voltage regulator • Constant current drive backlighting application • Motor drive • Relay replacement 4. Quick reference data Table 1. Quick reference data Symbol Parameter VCEO collector-emitter voltage IC collector current ICM peak collector current hFE DC current gain Conditions open base single pulse; tp ≤ 1 ms VCE = -4 V; IC = -1 A; Tamb = 25 °C VCE = -4 V; IC = -3 A; Tamb = 25 °C Min Typ Max Unit - - -100 V --25 10 - -3 A -5 A 50 Nexperia MJD32C 100 V, 3 A PNP high power bipolar transistor 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline 1 B base mb 2 C collector 3 E emitter mb C mounting base; connected to collector 2 13 DPAK (SOT428) Graphic symbol E B C; mb aaa-029523 6. Ordering information Table 3. Ordering information Type number Package Name MJD32C DPAK Description Version plastic, single-ended surface-mounted package (DPAK); 3 leads; SOT428 2.285 mm pitch; 6 mm x 6.6 mm x 2.3 mm body 7. Marking Table 4. Marking codes Type number MJD32C Marking code MJD32C 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VCEO VEBO IC ICM Ptot Tj Tamb Tstg Parameter collector-emitter voltage emitter-base voltage collector current peak collector current total power dissipation junction temperature ambient temperature storage temperature Conditions open base open collector single pulse; tp ≤ 1 ms Tmb ≤ 25 °C Tamb ≤ 25 °C Min Max - -100 - -6 - -3 - -5 [1] - 15 [2] - 1.6 - 150 -55 150 -65 150 [1] Total power dissipation junction to mounting base. [2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated mounting pad for collector 1 cm2. Unit V V A A W W °C °C °C MJD32C Preliminary data sheet All information provided in this document is subject to legal disclaimers. 23 May 2019 © Nexperia B.V. 2019. All rights reserved 2 / 11 Nexperia 2.0 Ptot (W) 1.5 MJD32C 100 V, 3 A PNP high power bipolar transistor aaa-029909 1.0 0.5 Fig. 1. 0 -50 0 50 100 150 200 Tamb (°C) FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2. Power derating curves SOT428 9. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions Rth(j-mb) thermal resistance from in free air junction to mounting base Rth(j-a) thermal resistance from junction to ambient Min Typ Max Unit - - 9 K/W [1] - - 79 K/W [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. 102 Zth(j-a) (K/W) 10 duty cycle = 1 0.75 0.50 0.33 0.20 0.10 0.05 0.02 aaa-029910 0.01 0 1 10-1 10-5 10-4 10-3 10-2 10-1 1 10 FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2. 102 103 tp (s) Fig. 2. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values MJD32C Preliminary data sheet All information provided in this document is subject to legal disclaimers. 23 May 2019 © Nexperia B.V. 2019. All rights reserved 3 / 11 Nexperia MJD32C 100 V, 3 A PNP high power bipolar transistor 10. Characteristics Table 7. Characteristics Symbol Parameter Conditions ICES collector-emitter cut-off VCE = -80 V; VBE = 0 V; Tamb = 25 °C current VCE = -80 V; VBE = 0 V; Tj = 150 °C IEBO emitter-base cut-off VEB = -5 V; IC = 0 A; Tamb = 25 °C current hFE DC current gain VCE = -4 V; IC = -1 A; Tamb = 25 °C VCE = -4 V; IC = -3 A; Tamb = 25 °C VCEsat collector-emitter saturation voltage IC = -3 A; IB = -375 mA; Tamb = 25 °C VBE base-emitter voltage VCE = -4 V; IC = -3 mA; Tamb = 25 °C hfe small-signal current VCE = -10 V; IC = -500 A; f = 1 kHz; gain Tamb = 25 °C fT transition frequency VCE = -10 V; IC = -500 mA; f = 1 MHz; Tamb = 25 °C 103 hFE (1) (2) aaa-029918 3.0 IC (A) 2.4 (3) 102 1.8 1.2 Min Typ Max Unit - - -1 µA - - -50 µA - - -1 µA 25 10 -- 50 -1.2 V -20 - -1.8 V - 3 - - MHz aaa-029919 IB (mA) = -100 -90 -80 -70 -60 -50 -40 -30 -20 -10 0.6 10 -10 -102 -103 -104 IC (mA) VCE = -4 V (1) Tamb = 150 °C (2) Tamb = 25 °C (3) Tamb = −55 °C Fig. 3. DC current gain as a function of collector current; typical values 0 0 -1 -2 -3 -4 -5 VCE (V) Tamb = 25 °C Fig. 4. Collector current as a function of collectoremitter voltage; typical values MJD32C Preliminary data sheet All information prov.


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