Document
MJD32C
100 V, 3 A PNP high power bipolar transistor
23 May 2019
Preliminary data sheet
1. General description
PNP high power bipolar transistor in a power SOT428 Surface-Mounted Device (SMD) plastic package.
NPN complement: MJD31C
2. Features and benefits
• High thermal power dissipation capability • High energy efficiency due to less heat generation • Electrically similar to popular MJD32 series • Low collector emitter saturation voltage • Fast switching speeds
3. Applications
• Power management • Load switch • Linear mode voltage regulator • Constant current drive backlighting application • Motor drive • Relay replacement
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
VCEO
collector-emitter voltage
IC collector current ICM peak collector current hFE DC current gain
Conditions open base
single pulse; tp ≤ 1 ms VCE = -4 V; IC = -1 A; Tamb = 25 °C VCE = -4 V; IC = -3 A; Tamb = 25 °C
Min Typ Max Unit - - -100 V
--25 10 -
-3 A -5 A 50
Nexperia
MJD32C
100 V, 3 A PNP high power bipolar transistor
5. Pinning information
Table 2. Pinning information Pin Symbol Description
Simplified outline
1 B base
mb
2 C collector
3 E emitter
mb C
mounting base; connected to collector
2
13
DPAK (SOT428)
Graphic symbol
E
B
C; mb aaa-029523
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
MJD32C
DPAK
Description
Version
plastic, single-ended surface-mounted package (DPAK); 3 leads; SOT428 2.285 mm pitch; 6 mm x 6.6 mm x 2.3 mm body
7. Marking
Table 4. Marking codes Type number MJD32C
Marking code MJD32C
8. Limiting values
Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol VCEO VEBO IC ICM Ptot
Tj Tamb Tstg
Parameter collector-emitter voltage emitter-base voltage collector current peak collector current total power dissipation
junction temperature ambient temperature storage temperature
Conditions open base open collector
single pulse; tp ≤ 1 ms Tmb ≤ 25 °C Tamb ≤ 25 °C
Min Max
- -100
- -6
- -3
- -5
[1] -
15
[2] -
1.6
- 150
-55 150
-65 150
[1] Total power dissipation junction to mounting base. [2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated mounting pad for collector 1 cm2.
Unit V V A A W W °C °C °C
MJD32C
Preliminary data sheet
All information provided in this document is subject to legal disclaimers.
23 May 2019
© Nexperia B.V. 2019. All rights reserved
2 / 11
Nexperia
2.0 Ptot (W)
1.5
MJD32C
100 V, 3 A PNP high power bipolar transistor
aaa-029909
1.0
0.5
Fig. 1.
0 -50 0 50 100 150 200
Tamb (°C)
FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2.
Power derating curves SOT428
9. Thermal characteristics
Table 6. Thermal characteristics
Symbol
Parameter
Conditions
Rth(j-mb)
thermal resistance from in free air junction to mounting base
Rth(j-a)
thermal resistance from junction to ambient
Min Typ Max Unit - - 9 K/W
[1] - - 79 K/W
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.
102 Zth(j-a) (K/W)
10
duty cycle = 1
0.75 0.50
0.33 0.20 0.10
0.05 0.02
aaa-029910
0.01 0
1
10-1 10-5
10-4
10-3
10-2
10-1
1
10
FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2.
102 103 tp (s)
Fig. 2. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
MJD32C
Preliminary data sheet
All information provided in this document is subject to legal disclaimers.
23 May 2019
© Nexperia B.V. 2019. All rights reserved
3 / 11
Nexperia
MJD32C
100 V, 3 A PNP high power bipolar transistor
10. Characteristics
Table 7. Characteristics
Symbol
Parameter
Conditions
ICES collector-emitter cut-off VCE = -80 V; VBE = 0 V; Tamb = 25 °C
current
VCE = -80 V; VBE = 0 V; Tj = 150 °C
IEBO
emitter-base cut-off
VEB = -5 V; IC = 0 A; Tamb = 25 °C
current
hFE
DC current gain
VCE = -4 V; IC = -1 A; Tamb = 25 °C
VCE = -4 V; IC = -3 A; Tamb = 25 °C
VCEsat
collector-emitter saturation voltage
IC = -3 A; IB = -375 mA; Tamb = 25 °C
VBE base-emitter voltage VCE = -4 V; IC = -3 mA; Tamb = 25 °C
hfe small-signal current VCE = -10 V; IC = -500 A; f = 1 kHz;
gain
Tamb = 25 °C
fT transition frequency VCE = -10 V; IC = -500 mA; f = 1 MHz; Tamb = 25 °C
103 hFE
(1) (2)
aaa-029918
3.0 IC (A)
2.4
(3) 102
1.8 1.2
Min Typ Max Unit - - -1 µA - - -50 µA - - -1 µA
25 10 --
50 -1.2 V
-20 -
-1.8 V -
3 - - MHz
aaa-029919 IB (mA) = -100 -90
-80 -70 -60 -50 -40
-30
-20
-10
0.6
10 -10
-102
-103
-104
IC (mA)
VCE = -4 V (1) Tamb = 150 °C (2) Tamb = 25 °C (3) Tamb = −55 °C
Fig. 3. DC current gain as a function of collector current; typical values
0 0 -1 -2 -3 -4 -5 VCE (V)
Tamb = 25 °C
Fig. 4. Collector current as a function of collectoremitter voltage; typical values
MJD32C
Preliminary data sheet
All information prov.