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IRFI3205PbF

Power MOSFET

Description

 Advanced Process Technology  Ultra Low On-Resistance  Isolated Package  High Voltage Isolation = 2.5KVRMS   Sink to Lead Creepage Dist. = 4.8mm  Fully Avalanche Rated  Lead-Free IRFI3205PbF HEXFET® Power MOSFET VDSS 55V RDS(on) 0.008 ID 64A Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing t...

Infineon

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