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IRFI3205PbF Datasheet, Equivalent, Power MOSFET.

Power MOSFET

Power MOSFET

 

 

 

Part IRFI3205PbF
Description Power MOSFET
Feature   Advanced Process Technology Ultra L ow On-Resistance Isolated Package Hig h Voltage Isolation = 2.
5KVRMS  Sin k to Lead Creepage Dist.
= 4.
8mm Fully Avalanche Rated Lead-Free IRFI3205Pb F HEXFET® Power MOSFET   VDSS 55V RDS(on) 0.
008 ID 64A Descrip tion Fifth Generation HEXFETs from Inte rnational Rectifier utilize advanced pr ocessing techniques to achieve extremel y low onresistance per silicon area.
Th is benefit, combined with the fast swit ching speed and ruggedized device desig n that HEXFET Power MOSFETs are well kn own for, provides the designer with an extremely efficient and .
Manufacture Infineon
Datasheet
Download IRFI3205PbF Datasheet
Part IRFI3205PbF
Description Power MOSFET
Feature   Advanced Process Technology Ultra L ow On-Resistance Isolated Package Hig h Voltage Isolation = 2.
5KVRMS  Sin k to Lead Creepage Dist.
= 4.
8mm Fully Avalanche Rated Lead-Free IRFI3205Pb F HEXFET® Power MOSFET   VDSS 55V RDS(on) 0.
008 ID 64A Descrip tion Fifth Generation HEXFETs from Inte rnational Rectifier utilize advanced pr ocessing techniques to achieve extremel y low onresistance per silicon area.
Th is benefit, combined with the fast swit ching speed and ruggedized device desig n that HEXFET Power MOSFETs are well kn own for, provides the designer with an extremely efficient and .
Manufacture Infineon
Datasheet
Download IRFI3205PbF Datasheet

IRFI3205PbF

IRFI3205PbF
IRFI3205PbF

IRFI3205PbF

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