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IRFI3205PbF Datasheet, Equivalent, Power MOSFET.Power MOSFET Power MOSFET |
Part | IRFI3205PbF |
---|---|
Description | Power MOSFET |
Feature |
Advanced Process Technology Ultra L ow On-Resistance Isolated Package Hig h Voltage Isolation = 2. 5KVRMS Sin k to Lead Creepage Dist. = 4. 8mm Fully Avalanche Rated Lead-Free IRFI3205Pb F HEXFET® Power MOSFET VDSS 55V RDS(on) 0. 008 ID 64A Descrip tion Fifth Generation HEXFETs from Inte rnational Rectifier utilize advanced pr ocessing techniques to achieve extremel y low onresistance per silicon area. Th is benefit, combined with the fast swit ching speed and ruggedized device desig n that HEXFET Power MOSFETs are well kn own for, provides the designer with an extremely efficient and . |
Manufacture | Infineon |
Datasheet |
Part | IRFI3205PbF |
---|---|
Description | Power MOSFET |
Feature |
Advanced Process Technology Ultra L ow On-Resistance Isolated Package Hig h Voltage Isolation = 2. 5KVRMS Sin k to Lead Creepage Dist. = 4. 8mm Fully Avalanche Rated Lead-Free IRFI3205Pb F HEXFET® Power MOSFET VDSS 55V RDS(on) 0. 008 ID 64A Descrip tion Fifth Generation HEXFETs from Inte rnational Rectifier utilize advanced pr ocessing techniques to achieve extremel y low onresistance per silicon area. Th is benefit, combined with the fast swit ching speed and ruggedized device desig n that HEXFET Power MOSFETs are well kn own for, provides the designer with an extremely efficient and . |
Manufacture | Infineon |
Datasheet |
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