PDTA123YU

PDTA123Y series PNP resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 10 kΩ Rev. 04 — 3 September 2009 Product data sheet 1. Product profile 1.1 General description PNP Resistor-Equipped Transistors (RET). Table 1. Product overview Type number Package NXP PDTA123YE SOT416 PDTA123YK SOT346 PDTA123YM SOT883 PDTA123YS[1] SOT54 PDTA123YT SOT23 PDTA123YU SOT323 JEITA SC-75 SC-59A SC-101 SC-43A SC-70 JEDEC TO-236 TO-92 TO-236AB - [1] Also available in SOT54A and SOT54 variant packages (see Section 2) NPN complement PDTC123YE PDTC123YK PDTC123YM PDTC123YS PDTC123YT PDTC123YU 1.2 Features I Built-in bias resistors I Simplifies circuit design I Reduces component count I Reduces pick and place costs 1.3 Applications I General purpose switching and amplification I Inverter and interface circuits I Circuit drivers 1.4 Quick reference data Table 2. Symbol VCEO IO R1 R2/R1 Quick reference data Parameter collector-emitter voltage output current (DC) bias resistor 1 (input) bias resistor ratio Conditions open base Min Typ --1.54 2.2 3.6 4.5 Max −50 −100 2.86 5.5 Unit V mA kΩ NXP Semiconductors PDTA123Y series PNP resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 10 kΩ 2. Pinning information Table 3. Pin SOT54 1 2 3 Pinning Description input (base) output (collector) GND (emitter) SOT54A 1 2 3 input (base) output (collector) GND (emitter) SOT54 variant 1 input (base) 2 output (collector) 3 GND (emitter) SOT23, SOT323, SOT346, SOT416 1 input (base) 2 GND ...