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PDTA113EM Dataheets PDF



Part Number PDTA113EM
Manufacturers NXP
Logo NXP
Description PNP resistor-equipped transistors
Datasheet PDTA113EM DatasheetPDTA113EM Datasheet (PDF)

www.DataSheet4U.com PDTA113E series PNP resistor-equipped transistors; R1 = 1 kΩ, R2 = 1 kΩ Rev. 05 — 2 September 2009 Product data sheet 1. Product profile 1.1 General description PNP Resistor-Equipped Transistors (RET). Table 1. Product overview Type number Package NXP PDTA113EE SOT416 PDTA113EK SOT346 PDTA113EM SOT883 PDTA113ES[1] SOT54 (TO-92) PDTA113ET SOT23 PDTA113EU SOT323 JEITA SC-75 SC-59A SC-101 SC-43A SC-70 JEDEC TO-236 TO-92 TO-236AB - [1] Also available in SOT5.

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www.DataSheet4U.com PDTA113E series PNP resistor-equipped transistors; R1 = 1 kΩ, R2 = 1 kΩ Rev. 05 — 2 September 2009 Product data sheet 1. Product profile 1.1 General description PNP Resistor-Equipped Transistors (RET). Table 1. Product overview Type number Package NXP PDTA113EE SOT416 PDTA113EK SOT346 PDTA113EM SOT883 PDTA113ES[1] SOT54 (TO-92) PDTA113ET SOT23 PDTA113EU SOT323 JEITA SC-75 SC-59A SC-101 SC-43A SC-70 JEDEC TO-236 TO-92 TO-236AB - [1] Also available in SOT54A and SOT54 variant packages (see Section 2) NPN complement PDTC113EE PDTC113EK PDTC113EM PDTC113ES PDTC113ET PDTC113EU 1.2 Features I Built-in bias resistors I Simplifies circuit design I Reduces component count I Reduces pick and place costs 1.3 Applications I General purpose switching and amplification I Inverter and interface circuits I Circuit drivers 1.4 Quick reference data Table 2. Symbol VCEO IO R1 R2/R1 Quick reference data Parameter collector-emitter voltage output current (DC) bias resistor 1 (input) bias resistor ratio Conditions open base Min Typ Max Unit - - −50 V - - −100 mA 0.7 1 1.3 kΩ 0.8 1 1.2 NXP Semiconductors www.DataSheet4U.com PDTA113E series PNP resistor-equipped transistors; R1 = 1 kΩ, R2 = 1 kΩ 2. Pinning information Table 3. Pin SOT54 1 2 3 Pinning Description input (base) output (collector) GND (emitter) SOT54A 1 2 3 input (base) output (collector) GND (emitter) SOT54 variant 1 input (base) 2 output (collector) 3 GND (emitter) SOT23, SOT323, SOT346, SOT416 1 input (base) 2 GND (emitter) 3 output (collector) SOT883 1 2 3 input (base) GND (emitter) output (collector) Simplified outline Symbol 1 2 3 001aab347 R1 1 2 R2 3 006aaa148 1 2 3 001aab348 R1 1 2 R2 3 006aaa148 1 2 3 001aab447 R1 1 2 R2 3 006aaa148 3 12 006aaa144 R1 1 3 R2 2 sym003 1 3 2 Transparent top view R1 1 3 R2 2 sym003 PDTA113E_SER_5 Product data sheet Rev. 05 — 2 September 2009 © NXP B.V. 2009. All rights reserved. 2 of 18 NXP Semiconductors www.DataSheet4U.com PDTA113E series PNP resistor-equipped transistors; R1 = 1 kΩ, R2 = 1 kΩ 3. Ordering information 4. Marking Table 4. Ordering information Type number Package Name Description Version PDTA113EE SC-75 plastic surface mounted package; 3 leads SOT416 PDTA113EK SC-59A plastic surface mounted package; 3 leads SOT346 PDTA113EM SC-101 leadless ultra small plastic package; 3 solder lands; SOT883 body 1.0 × 0.6 × 0.5 mm PDTA113ES[1] SC-43A plastic single-ended leaded (through hole) package; SOT54 3 leads PDTA113ET - plastic surface mounted package; 3 leads SOT23 PDTA113EU SC-70 plastic surface mounted package; 3 leads SOT323 [1] Also available in SOT54A and SOT54 variant packages (see Section 2 and Section 9). Table 5. Marking codes Type number PDTA113EE PDTA113EK PDTA113EM PDTA113ES PDTA113ET PDTA113EU [1] * = -: made in Hong Kong * = p: made in Hong Kong * = t: made in Malaysia * = W: made in China Marking code[1] 16 17 G4 TA113E *15 *14 PDTA113E_SER_5 Product data sheet Rev. 05 — 2 September 2009 © NXP B.V. 2009. All rights reserved. 3 of 18 NXP Semiconductors www.DataSheet4U.com PDTA113E series PNP resistor-equipped transistors; R1 = 1 kΩ, R2 = 1 kΩ 5. Limiting values Table 6. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min VCBO VCEO VEBO VI collector-base voltage collector-emitter voltage emitter-base voltage input voltage positive open emitter open base open collector - - negative - IO output current (DC) - ICM peak collector current - Ptot total power dissipation Tamb ≤ 25 °C SOT416 [1] - SOT346 [1] - SOT883 [2][3] - SOT54 [1] - SOT23 [1] - SOT323 [1] - Tstg Tj Tamb storage temperature junction temperature ambient temperature −65 −65 Max Unit −50 V −50 V −10 V +10 −10 −100 −100 V V mA mA 150 250 250 500 250 200 +150 150 +150 mW mW mW mW mW mW °C °C °C [1] Refer to standard mounting conditions [2] Reflow soldering is the only recommended soldering method. [3] Refer to SOT883 standard mounting conditions; FR4 printed-circuit board with 60 µm copper strip line. 6. Thermal characteristics Table 7. Symbol Rth(j-a) Thermal characteristics Parameter thermal resistance from junction to ambient SOT416 SOT346 SOT883 SOT54 SOT23 SOT323 Conditions in free air Min Typ Max Unit [1] - - 833 K/W [1] - - 500 K/W [2][3] - - 500 K/W [1] - - 250 K/W [1] - - 500 K/W [1] - - 625 K/W [1] Refer to standard mounting conditions. [2] Reflow soldering is the only recommended soldering method. [3] Refer to SOT883 standard mounting conditions; FR4 printed-circuit board with 60 µm copper strip line. PDTA113E_SER_5 Product data sheet Rev. 05 — 2 September 2009 © NXP B.V. 2009. All rights reserved. 4 of 18 NXP Semiconductors www.DataSheet4U PDTA113E series PNP resistor-equipped transistors; R1 = 1 kΩ, R2 = 1 kΩ 7. Characteristics Tabl.


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