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PDTA113E series
PNP resistor-equipped transistors; R1 = 1 kΩ, R2 = 1 kΩ
Rev. 05 — 2 September 2009
Product data sheet
1. Product profile
1.1 General description
PNP Resistor-Equipped Transistors (RET).
Table 1. Product overview
Type number Package
NXP
PDTA113EE
SOT416
PDTA113EK
SOT346
PDTA113EM
SOT883
PDTA113ES[1] SOT54 (TO-92)
PDTA113ET
SOT23
PDTA113EU
SOT323
JEITA SC-75 SC-59A SC-101 SC-43A SC-70
JEDEC TO-236 TO-92 TO-236AB -
[1] Also available in SOT54A and SOT54 variant packages (see Section 2)
NPN complement
PDTC113EE PDTC113EK PDTC113EM PDTC113ES PDTC113ET PDTC113EU
1.2 Features
I Built-in bias resistors I Simplifies circuit design
I Reduces component count I Reduces pick and place costs
1.3 Applications
I General purpose switching and amplification
I Inverter and interface circuits
I Circuit drivers
1.4 Quick reference data
Table 2. Symbol VCEO IO R1 R2/R1
Quick reference data Parameter collector-emitter voltage output current (DC) bias resistor 1 (input) bias resistor ratio
Conditions open base
Min Typ Max Unit
- - −50 V
- - −100 mA
0.7 1
1.3 kΩ
0.8 1
1.2
NXP Semiconductors
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PDTA113E series
PNP resistor-equipped transistors; R1 = 1 kΩ, R2 = 1 kΩ
2. Pinning information
Table 3. Pin SOT54 1 2 3
Pinning Description
input (base) output (collector) GND (emitter)
SOT54A 1 2 3
input (base) output (collector) GND (emitter)
SOT54 variant 1 input (base) 2 output (collector) 3 GND (emitter)
SOT23, SOT323, SOT346, SOT416 1 input (base) 2 GND (emitter) 3 output (collector)
SOT883 1 2 3
input (base) GND (emitter) output (collector)
Simplified outline Symbol
1 2 3
001aab347
R1 1
2
R2 3
006aaa148
1
2
3 001aab348
R1 1
2
R2 3
006aaa148
1 2 3
001aab447
R1 1
2
R2 3
006aaa148
3
12 006aaa144
R1 1
3
R2
2 sym003
1 3
2
Transparent top view
R1 1
3
R2
2 sym003
PDTA113E_SER_5
Product data sheet
Rev. 05 — 2 September 2009
© NXP B.V. 2009. All rights reserved.
2 of 18
NXP Semiconductors
www.DataSheet4U.com
PDTA113E series
PNP resistor-equipped transistors; R1 = 1 kΩ, R2 = 1 kΩ
3. Ordering information
4. Marking
Table 4. Ordering information
Type number Package
Name Description
Version
PDTA113EE
SC-75 plastic surface mounted package; 3 leads
SOT416
PDTA113EK
SC-59A plastic surface mounted package; 3 leads
SOT346
PDTA113EM
SC-101 leadless ultra small plastic package; 3 solder lands; SOT883 body 1.0 × 0.6 × 0.5 mm
PDTA113ES[1] SC-43A plastic single-ended leaded (through hole) package; SOT54 3 leads
PDTA113ET
-
plastic surface mounted package; 3 leads
SOT23
PDTA113EU
SC-70 plastic surface mounted package; 3 leads
SOT323
[1] Also available in SOT54A and SOT54 variant packages (see Section 2 and Section 9).
Table 5. Marking codes Type number PDTA113EE PDTA113EK PDTA113EM PDTA113ES PDTA113ET PDTA113EU
[1] * = -: made in Hong Kong * = p: made in Hong Kong * = t: made in Malaysia * = W: made in China
Marking code[1] 16 17 G4 TA113E *15 *14
PDTA113E_SER_5
Product data sheet
Rev. 05 — 2 September 2009
© NXP B.V. 2009. All rights reserved.
3 of 18
NXP Semiconductors
www.DataSheet4U.com
PDTA113E series
PNP resistor-equipped transistors; R1 = 1 kΩ, R2 = 1 kΩ
5. Limiting values
Table 6. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
VCBO VCEO VEBO VI
collector-base voltage collector-emitter voltage emitter-base voltage input voltage
positive
open emitter open base open collector
-
-
negative
-
IO output current (DC)
-
ICM peak collector current
-
Ptot
total power dissipation
Tamb ≤ 25 °C
SOT416
[1] -
SOT346
[1] -
SOT883
[2][3] -
SOT54
[1] -
SOT23
[1] -
SOT323
[1] -
Tstg Tj Tamb
storage temperature junction temperature ambient temperature
−65 −65
Max Unit −50 V −50 V −10 V
+10 −10 −100 −100
V V mA mA
150 250 250 500 250 200 +150 150 +150
mW mW mW mW mW mW °C °C °C
[1] Refer to standard mounting conditions [2] Reflow soldering is the only recommended soldering method. [3] Refer to SOT883 standard mounting conditions; FR4 printed-circuit board with 60 µm copper strip line.
6. Thermal characteristics
Table 7. Symbol Rth(j-a)
Thermal characteristics Parameter thermal resistance from junction to ambient SOT416 SOT346 SOT883 SOT54 SOT23 SOT323
Conditions in free air
Min Typ Max Unit
[1] - - 833 K/W [1] - - 500 K/W [2][3] - - 500 K/W [1] - - 250 K/W [1] - - 500 K/W [1] - - 625 K/W
[1] Refer to standard mounting conditions. [2] Reflow soldering is the only recommended soldering method. [3] Refer to SOT883 standard mounting conditions; FR4 printed-circuit board with 60 µm copper strip line.
PDTA113E_SER_5
Product data sheet
Rev. 05 — 2 September 2009
© NXP B.V. 2009. All rights reserved.
4 of 18
NXP Semiconductors
www.DataSheet4U
PDTA113E series
PNP resistor-equipped transistors; R1 = 1 kΩ, R2 = 1 kΩ
7. Characteristics
Tabl.