PDTB123YT
PNP 500 mA, 50 V resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 10 kΩ
Rev. 3 — 30 August 2010
Product data...
PDTB123YT
PNP 500 mA, 50 V resistor-equipped
transistor; R1 = 2.2 kΩ, R2 = 10 kΩ
Rev. 3 — 30 August 2010
Product data sheet
1. Product profile
1.1 General description
500 mA
PNP Resistor-Equipped
Transistor (RET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.
NPN complement: PDTD123YT.
1.2 Features and benefits
500 mA output current capability Built-in bias resistors Simplifies circuit design Reduces component count
Reduces pick and place costs ±10 % resistor ratio tolerance AEC-Q101 qualified
1.3 Applications
Digital application in automotive and industrial segments
Control of IC inputs
Cost-saving alternative for BC807 series in digital applications
Switching loads
1.4 Quick reference data
Table 1. Symbol VCEO IO R1 R2/R1
Quick reference data Parameter collector-emitter voltage output current bias resistor 1 (input) bias resistor ratio
Conditions open base
Min Typ Max Unit - - −50 V - - −500 mA 1.54 2.2 2.86 kΩ 4.1 4.55 5
NXP Semiconductors
PDTB123YT
PNP 500 mA, resistor-equipped
transistor; R1 = 2.2 kΩ, R2 = 10 kΩ
2. Pinning information
Table 2. Pin 1 2 3
Pinning Description input (base) GND (emitter) output (collector)
Simplified outline
Graphic symbol
3
12
006aaa144
R1
1
3
R2
2
sym003
3. Ordering information
Table 3. Ordering information
Type number Package
Name Description
PDTB123YT
-
plastic surface-mounted package; 3 leads
4. Marking
Table 4. Marking codes Type number PDTB123YT
[1] * =...