PBRN123E series
NPN 800 mA, 40 V BISS RETs; R1 = 2.2 kΩ, R2 = 2.2 kΩ
Rev. 01 — 27 February 2007
Product data sheet
1...
PBRN123E series
NPN 800 mA, 40 V BISS RETs; R1 = 2.2 kΩ, R2 = 2.2 kΩ
Rev. 01 — 27 February 2007
Product data sheet
1. Product profile
1.1 General description
800 mA
NPN low VCEsat Breakthrough In Small Signal (BISS) Resistor-Equipped
Transistors (RET) family in small plastic packages.
Table 1. Product overview
Type number
Package
Nexperia
PBRN123EK
SOT346
PBRN123ES[1]
SOT54
PBRN123ET
SOT23
JEITA SC-59A SC-43A -
[1] Also available in SOT54A and SOT54 variant packages (see Section 2).
JEDEC TO-236 TO-92 TO-236AB
1.2 Features
I 800 mA output current capability
I High current gain hFE I Built-in bias resistors I Simplifies circuit design
I Low collector-emitter saturation voltage VCEsat
I Reduces component count I Reduces pick and place costs I ±10 % resistor ratio tolerance
1.3 Applications
I Digital application in automotive and industrial segments
I Medium current peripheral driver
I Switching loads
1.4 Quick reference data
Table 2. Symbol VCEO IO
Quick reference data
Parameter
Conditions
collector-emitter voltage
open base
output current
PBRN123EK, PBRN123ET
PBRN123ES
Min Typ Max Unit - - 40 V
[1]
- - 600 mA - - 800 mA
Nexperia
PBRN123E series
NPN 800 mA, 40 V BISS RETs; R1 = 2.2 kΩ, R2 = 2.2 kΩ
Table 2. Symbol IORM
R1 R2/R1
Quick reference data …continued
Parameter
Conditions
repetitive peak output current
PBRN123EK, PBRN123ET tp ≤ 1 ms; δ ≤ 0.33 bias resistor 1 (input)
bias resistor ratio
Min Typ Max Unit
-1.54 2.2 0.9 1
800 mA 2.8...