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PBHV9560Z Dataheets PDF



Part Number PBHV9560Z
Manufacturers nexperia
Logo nexperia
Description PNP transistor
Datasheet PBHV9560Z DatasheetPBHV9560Z Datasheet (PDF)

PBHV9560Z 600 V, 0.5 A PNP high-voltage low VCEsat (BISS) transistor 12 August 2014 Product data sheet 1. General description PNP high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package. NPN complement: PBHV8560Z 2. Features and benefits • High voltage • Low collector-emitter saturation voltage VCEsat • High collector current capability IC • High collector current gain hFE at high IC • AEC-Q101 qual.

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PBHV8560Z PBHV9560Z PBRP113ET


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