PBSS3540MB

PBSS3540MB 40 V, 0.5 A PNP low VCEsat (BISS) transistor Rev. 1 — 7 March 2012 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small SOT883B Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS2540MB. 1.2 Features and benefits  Leadless ultra small SMD plastic package  Low package height of 0.37 mm  Low collector-emitter saturation voltage VCEsat  High collector current capability IC and ICM 1.3 Applications  DC-to-DC conversion  Supply line switching  Battery charger  High efficiency due to less heat generation  AEC-Q101 qualified  Reduced Printed-Circuit Board (PCB) requirements  LCD backlighting  Driver in low supply voltage applications (e.g. lamps and LEDs) 1.4 Quick reference data Table 1. Symbol VCEO IC ICM RCEsat Quick reference data Parameter collector-emitter voltage collector current peak collector current collector-emitter saturation resistance Conditions open base single pulse; tp ≤ 1 ms IC = -500 mA; IB = -50 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C Min Typ Max Unit - - -40 V - - -500 mA - - -1 A - 440 700 mΩ Nexperia PBSS3540MB 40 V, 0.5 A PNP low VCEsat (BISS) transistor 2. Pinning information Table 2. Pin 1 2 3 Pinning information Symbol Description B base E emitter C collector Simplified outline 1 2 Transparent top view SOT883B 3 Graphic symbol 3 1 2 sym013 3. Ordering information Table 3. Ordering informatio...