Document
PBSS4021NZ
20 V, 8 A NPN low VCEsat (BISS) transistor
Rev. 01 — 31 March 2010
Product data sheet
1. Product profile
1.1 General description
NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) medium power Surface-Mounted Device (SMD) plastic package.
PNP complement: PBSS4021PZ.
1.2 Features and benefits
Very low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain (hFE) at high IC High energy efficiency due to less heat generation AEC-Q101 qualified Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
1.3 Applications
Loadswitch Battery-driven devices Power management Charging circuits Power switches (e.g. motors, fans)
1.4 Quick reference data
Table 1. Symbol VCEO IC ICM
RCEsat
Quick reference data
Parameter
Conditions
collector-emitter voltage open base
collector current
peak collector current
collector-emitter saturation resistance
single pulse; tp ≤ 1 ms
IC = 6 A; IB = 600 mA
[1] Pulse test: tp ≤ 300 μs; δ ≤ 0.02.
Min Typ Max Unit - - 20 V - - 8A - - 20 A
[1] -
14 20 mΩ
Nexperia
PBSS4021NZ
20 V, 8 A NPN low VCEsat (BISS) transistor
2. Pinning information
Table 2. Pin 1 2 3 4
Pinning Description base collector emitter collector
Simplified outline Graphic symbol
4 2, 4
123
1
3
sym016
3. Ordering information
Table 3. Ordering information
Type number Package
Name
Description
PBSS4021NZ SC-73
plastic surface-mounted package with increased heat sink; 4 leads
Version SOT223
4. Marking
Table 4. Marking codes Type number PBSS4021NZ
Marking code PB4021NZ
5. Limiting values
Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
VCBO VCEO VEBO IC ICM
IB
collector-base voltage open emitter
collector-emitter voltage open base
emitter-base voltage
open collector
collector current
peak collector current base current
single pulse; tp ≤ 1 ms
-
-
Max Unit 20 V 20 V 5V 8A 20 A
1A
PBSS4021NZ_1
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 01 — 31 March 2010
© Nexperia B.V. 2017. All rights reserved
2 of 15
Nexperia
PBSS4021NZ
20 V, 8 A NPN low VCEsat (BISS) transistor
Table 5. Limiting values …continued In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
Ptot total power dissipation Tamb ≤ 25 °C
[1] [2] -
[3] -
Tj Tamb Tstg
junction temperature ambient temperature storage temperature
−55 −65
Max 770 1700 2600 150 +150 +150
Unit mW mW mW °C °C °C
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm2. [3] Device mounted on a ceramic PCB, Al2O3, standard footprint.
3.0
Ptot (W)
2.0
(1) (2)
006aac060
1.0
(3)
0 −75
−25
25
75
(1) Ceramic PCB, Al2O3, standard footprint (2) FR4 PCB, mounting pad for collector 6 cm2 (3) FR4 PCB, standard footprint
Fig 1. Power derating curves
125 175 Tamb (°C)
PBSS4021NZ_1
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 01 — 31 March 2010
© Nexperia B.V. 2017. All rights reserved
3 of 15
Nexperia
PBSS4021NZ
20 V, 8 A NPN low VCEsat (BISS) transistor
6. Thermal characteristics
Table 6. Symbol Rth(j-a)
Thermal characteristics
Parameter
thermal resistance from junction to ambient
Rth(j-sp)
thermal resistance from junction to solder point
Conditions in free air
Min Typ Max Unit [1] - - 160 K/W [2] - - 75 K/W [3] - - 50 K/W
- - 11 K/W
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm2. [3] Device mounted on a ceramic PCB, Al2O3, standard footprint.
103
Zth(j-a) (K/W)
102
10
duty cycle = 1
0.75 0.5
0.33 0.2
0.1
0.05
0.02
1 0
0.01
006aac061
10−1 10−5
10−4
10−3
10−2
10−1
1
10 102 103 tp (s)
FR4 PCB, standard footprint
Fig 2. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
PBSS4021NZ_1
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 01 — 31 March 2010
© Nexperia B.V. 2017. All rights reserved
4 of 15
Nexperia
PBSS4021NZ
20 V, 8 A NPN low VCEsat (BISS) transistor
103
Zth(j-a) (K/W)
102
10
duty cycle = 1
0.75 0.5
0.33 0.2
0.1 0.05
0.02 1
0.01
0
006aac062
10−1 10−5
10−4
10−3
10−2
10−1
1
10 102 103 tp (s)
FR4 PCB, mounting pad for collector 6 cm2
Fig 3. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
102
Zth(j-a) (K/W)
10
duty cycle = 1
0.50 0.20
0.75 0.33
0.10
0.05
0.02 1
0.01
0
006aac063
10−1 10−5
10−4
10−3
1.