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PBSS4021NZ Dataheets PDF



Part Number PBSS4021NZ
Manufacturers nexperia
Logo nexperia
Description NPN transistor
Datasheet PBSS4021NZ DatasheetPBSS4021NZ Datasheet (PDF)

PBSS4021NZ 20 V, 8 A NPN low VCEsat (BISS) transistor Rev. 01 — 31 March 2010 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) medium power Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS4021PZ. 1.2 Features and benefits „ Very low collector-emitter saturation voltage VCEsat „ High collector current capability IC and ICM „ High collector current gain (hFE) at high IC „ High energ.

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PBSS4021NZ 20 V, 8 A NPN low VCEsat (BISS) transistor Rev. 01 — 31 March 2010 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) medium power Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS4021PZ. 1.2 Features and benefits „ Very low collector-emitter saturation voltage VCEsat „ High collector current capability IC and ICM „ High collector current gain (hFE) at high IC „ High energy efficiency due to less heat generation „ AEC-Q101 qualified „ Smaller required Printed-Circuit Board (PCB) area than for conventional transistors 1.3 Applications „ Loadswitch „ Battery-driven devices „ Power management „ Charging circuits „ Power switches (e.g. motors, fans) 1.4 Quick reference data Table 1. Symbol VCEO IC ICM RCEsat Quick reference data Parameter Conditions collector-emitter voltage open base collector current peak collector current collector-emitter saturation resistance single pulse; tp ≤ 1 ms IC = 6 A; IB = 600 mA [1] Pulse test: tp ≤ 300 μs; δ ≤ 0.02. Min Typ Max Unit - - 20 V - - 8A - - 20 A [1] - 14 20 mΩ Nexperia PBSS4021NZ 20 V, 8 A NPN low VCEsat (BISS) transistor 2. Pinning information Table 2. Pin 1 2 3 4 Pinning Description base collector emitter collector Simplified outline Graphic symbol 4 2, 4 123 1 3 sym016 3. Ordering information Table 3. Ordering information Type number Package Name Description PBSS4021NZ SC-73 plastic surface-mounted package with increased heat sink; 4 leads Version SOT223 4. Marking Table 4. Marking codes Type number PBSS4021NZ Marking code PB4021NZ 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min VCBO VCEO VEBO IC ICM IB collector-base voltage open emitter collector-emitter voltage open base emitter-base voltage open collector collector current peak collector current base current single pulse; tp ≤ 1 ms - - Max Unit 20 V 20 V 5V 8A 20 A 1A PBSS4021NZ_1 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 01 — 31 March 2010 © Nexperia B.V. 2017. All rights reserved 2 of 15 Nexperia PBSS4021NZ 20 V, 8 A NPN low VCEsat (BISS) transistor Table 5. Limiting values …continued In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Ptot total power dissipation Tamb ≤ 25 °C [1] [2] - [3] - Tj Tamb Tstg junction temperature ambient temperature storage temperature −55 −65 Max 770 1700 2600 150 +150 +150 Unit mW mW mW °C °C °C [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm2. [3] Device mounted on a ceramic PCB, Al2O3, standard footprint. 3.0 Ptot (W) 2.0 (1) (2) 006aac060 1.0 (3) 0 −75 −25 25 75 (1) Ceramic PCB, Al2O3, standard footprint (2) FR4 PCB, mounting pad for collector 6 cm2 (3) FR4 PCB, standard footprint Fig 1. Power derating curves 125 175 Tamb (°C) PBSS4021NZ_1 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 01 — 31 March 2010 © Nexperia B.V. 2017. All rights reserved 3 of 15 Nexperia PBSS4021NZ 20 V, 8 A NPN low VCEsat (BISS) transistor 6. Thermal characteristics Table 6. Symbol Rth(j-a) Thermal characteristics Parameter thermal resistance from junction to ambient Rth(j-sp) thermal resistance from junction to solder point Conditions in free air Min Typ Max Unit [1] - - 160 K/W [2] - - 75 K/W [3] - - 50 K/W - - 11 K/W [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm2. [3] Device mounted on a ceramic PCB, Al2O3, standard footprint. 103 Zth(j-a) (K/W) 102 10 duty cycle = 1 0.75 0.5 0.33 0.2 0.1 0.05 0.02 1 0 0.01 006aac061 10−1 10−5 10−4 10−3 10−2 10−1 1 10 102 103 tp (s) FR4 PCB, standard footprint Fig 2. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values PBSS4021NZ_1 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 01 — 31 March 2010 © Nexperia B.V. 2017. All rights reserved 4 of 15 Nexperia PBSS4021NZ 20 V, 8 A NPN low VCEsat (BISS) transistor 103 Zth(j-a) (K/W) 102 10 duty cycle = 1 0.75 0.5 0.33 0.2 0.1 0.05 0.02 1 0.01 0 006aac062 10−1 10−5 10−4 10−3 10−2 10−1 1 10 102 103 tp (s) FR4 PCB, mounting pad for collector 6 cm2 Fig 3. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 102 Zth(j-a) (K/W) 10 duty cycle = 1 0.50 0.20 0.75 0.33 0.10 0.05 0.02 1 0.01 0 006aac063 10−1 10−5 10−4 10−3 1.


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