PBSS4032NX

PBSS4032NX 30 V, 4.7 A NPN low VCEsat (BISS) transistor Rev. 01 — 1 April 2010 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power and flat lead SOT89 (SC-62) Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS4032PX. 1.2 Features and benefits „ Very low collector-emitter saturation voltage VCEsat „ Optimized switching time „ High collector current capability IC and ICM „ High collector current gain (hFE) at high IC „ High energy efficiency due to less heat generation „ AEC-Q101 qualified „ Smaller required Printed-Circuit Board (PCB) area than for conventional transistors 1.3 Applications „ Battery-driven devices „ Power management „ Charging circuits „ Power switches (e.g. motors, fans) 1.4 Quick reference data Table 1. Symbol VCEO IC ICM RCEsat Quick reference data Parameter Conditions collector-emitter voltage open base collector current peak collector current collector-emitter saturation resistance single pulse; tp ≤ 1 ms IC = 4 A; IB = 400 mA [1] Pulse test: tp ≤ 300 μs; δ ≤ 0.02. Min Typ Max Unit - - 30 V - - 4.7 A - - 10 A [1] - 45 62.5 mΩ Nexperia PBSS4032NX 30 V, 4.7 A NPN low VCEsat (BISS) transistor 2. Pinning information Table 2. Pin 1 2 3 Pinning Description emitter collector base Simplified outline Graphic symbol 321 2 3 1 sym042 3. Ordering information Table 3. Ordering information Type number Package Name Description PBSS4032N...