PBSS4032NX
30 V, 4.7 A NPN low VCEsat (BISS) transistor
Rev. 01 — 1 April 2010
Product data sheet
1. Product profile
...
PBSS4032NX
30 V, 4.7 A
NPN low VCEsat (BISS)
transistor
Rev. 01 — 1 April 2010
Product data sheet
1. Product profile
1.1 General description
NPN low VCEsat Breakthrough In Small Signal (BISS)
transistor in a medium power and flat lead SOT89 (SC-62) Surface-Mounted Device (SMD) plastic package.
PNP complement: PBSS4032PX.
1.2 Features and benefits
Very low collector-emitter saturation voltage VCEsat Optimized switching time High collector current capability IC and ICM High collector current gain (hFE) at high IC High energy efficiency due to less heat generation AEC-Q101 qualified Smaller required Printed-Circuit Board (PCB) area than for conventional
transistors
1.3 Applications
Battery-driven devices Power management Charging circuits Power switches (e.g. motors, fans)
1.4 Quick reference data
Table 1. Symbol VCEO IC ICM
RCEsat
Quick reference data
Parameter
Conditions
collector-emitter voltage open base
collector current
peak collector current
collector-emitter saturation resistance
single pulse; tp ≤ 1 ms
IC = 4 A; IB = 400 mA
[1] Pulse test: tp ≤ 300 μs; δ ≤ 0.02.
Min Typ Max Unit - - 30 V - - 4.7 A - - 10 A
[1] - 45 62.5 mΩ
Nexperia
PBSS4032NX
30 V, 4.7 A
NPN low VCEsat (BISS)
transistor
2. Pinning information
Table 2. Pin 1 2 3
Pinning Description emitter collector base
Simplified outline Graphic symbol
321
2
3
1 sym042
3. Ordering information
Table 3. Ordering information
Type number Package
Name
Description
PBSS4032N...