PBSS4032PZ
30 V, 4.4 A PNP low VCEsat (BISS) transistor
Rev. 01 — 31 March 2010
Product data sheet
1. Product profile
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PBSS4032PZ
30 V, 4.4 A
PNP low VCEsat (BISS)
transistor
Rev. 01 — 31 March 2010
Product data sheet
1. Product profile
1.1 General description
PNP low VCEsat Breakthrough In Small Signal (BISS)
transistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package.
NPN complement: PBSS4032NZ.
1.2 Features and benefits
Low collector-emitter saturation voltage VCEsat Optimized switching time High collector current capability IC and ICM High collector current gain (hFE) at high IC High energy efficiency due to less heat generation AEC-Q101 qualified Smaller required Printed-Circuit Board (PCB) area than for conventional
transistors
1.3 Applications
DC-to-DC conversion Battery-driven devices Power management Charging circuits
1.4 Quick reference data
Table 1. Symbol VCEO IC ICM
RCEsat
Quick reference data
Parameter
Conditions
collector-emitter voltage open base
collector current
peak collector current
collector-emitter saturation resistance
single pulse; tp ≤ 1 ms
IC = −4 A; IB = −400 mA
[1] Pulse test: tp ≤ 300 μs; δ ≤ 0.02.
Min Typ Max Unit - - −30 V - - −4.4 A - - −10 A
[1] -
58 86 mΩ
Nexperia
PBSS4032PZ
30 V, 4.4 A
PNP low VCEsat (BISS)
transistor
2. Pinning information
Table 2. Pin 1 2 3 4
Pinning Description base collector emitter collector
Simplified outline Graphic symbol
4 2, 4
123
1
3
sym028
3. Ordering information
Table 3. Ordering information
Type number Package
Name
Description
PBSS4032PZ SC-73
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