PBSS4032SN

PBSS4032SN 30 V, 5.7 A NPN/NPN low VCEsat (BISS) transistor Rev. 2 — 13 October 2010 Product data sheet 1. Product profile 1.1 General description NPN/NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT96-1 (SO8) medium power Surface-Mounted Device (SMD) plastic package. Table 1. Product overview Type number Package Nexperia PBSS4032SN SOT96-1 Name SO8 PNP/PNP complement PBSS4032SP NPN/PNP complement PBSS4032SPN 1.2 Features and benefits „ Low collector-emitter saturation voltage VCEsat „ Optimized switching time „ High collector current capability IC and ICM „ High collector current gain (hFE) at high IC „ High efficiency due to less heat generation „ Smaller required Printed-Circuit Board (PCB) area than for conventional transistors 1.3 Applications „ DC-to-DC conversion „ Battery-driven devices „ Power management „ Charging circuits 1.4 Quick reference data Table 2. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VCEO IC ICM RCEsat collector-emitter voltage collector current peak collector current collector-emitter saturation resistance open base single pulse; tp ≤ 1 ms IC = 4 A; IB = 0.4 A - [1] - - 30 V - 5.7 A - 10 A 45 62.5 mΩ [1] Pulse test: tp ≤ 300 μs; δ ≤ 0.02. Nexperia PBSS4032SN 30 V, 5.7 A NPN/NPN low VCEsat (BISS) transistor 2. Pinning information Table 3. Pin 1 2 3 4 5 6 7 8 Pinning Description emitter TR1 base TR1 emitter TR2 base TR2 collector TR2 collector TR2 collector TR1 collector TR1 S...