PBSS4032SPN

PBSS4032SPN 30 V NPN/PNP low VCEsat (BISS) transistor Rev. 2 — 14 October 2010 Product data sheet 1. Product profile 1.1 General description NPN/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT96-1 (SO8) medium power Surface-Mounted Device (SMD) plastic package. Table 1. Product overview Type number Package Nexperia PBSS4032SPN SOT96-1 Name SO8 NPN/NPN complement PBSS4032SN PNP/PNP complement PBSS4032SP 1.2 Features and benefits „ Low collector-emitter saturation voltage VCEsat „ Optimized switching time „ High collector current capability IC and ICM „ High collector current gain (hFE) at high IC „ High efficiency due to less heat generation „ Smaller required Printed-Circuit Board (PCB) area than for conventional transistors 1.3 Applications „ DC-to-DC conversion „ Battery-driven devices „ Power management „ Charging circuits 1.4 Quick reference data Table 2. Quick reference data Symbol Parameter TR1; NPN low VCEsat transistor VCEO collector-emitter voltage IC collector current ICM peak collector current RCEsat collector-emitter saturation resistance Conditions open base single pulse; tp ≤ 1 ms IC = 4 A; IB = 0.4 A Min Typ Max Unit - - 30 V - - 5.7 A - - 10 A [1] - 45 62.5 mΩ Nexperia PBSS4032SPN 30 V NPN/PNP low VCEsat (BISS) transistor Table 2. Quick reference data …continued Symbol Parameter Conditions TR2; PNP low VCEsat transistor VCEO collector-emitter voltage IC collector current ICM peak collector current RCEsat collector-...