PBSS4041SP

PBSS4041SP 60 V, 5.9 A PNP/PNP low VCEsat (BISS) transistor Rev. 2 — 18 October 2010 Product data sheet 1. Product profile 1.1 General description PNP/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT96-1 (SO8) medium power Surface-Mounted Device (SMD) plastic package. Table 1. Product overview Type number Package Nexperia PBSS4041SP SOT96-1 Name SO8 NPN/NPN complement PBSS4041SN NPN/PNP complement PBSS4041SPN 1.2 Features and benefits „ Very low collector-emitter saturation voltage VCEsat „ High collector current capability IC and ICM „ High collector current gain (hFE) at high IC „ High efficiency due to less heat generation „ Smaller required Printed-Circuit Board (PCB) area than for conventional transistors 1.3 Applications „ Loadswitch „ Battery-driven devices „ Power management „ Charging circuits „ Power switches (e.g. motors, fans) 1.4 Quick reference data Table 2. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VCEO IC ICM RCEsat collector-emitter voltage collector current peak collector current collector-emitter saturation resistance open base - - single pulse; - tp ≤ 1 ms IC = −4 A; IB = −0.4 A [1] - - −60 V - −5.9 A - −15 A 47 70 mΩ [1] Pulse test: tp ≤ 300 μs; δ ≤ 0.02. Nexperia PBSS4041SP 60 V, 5.9 A PNP/PNP low VCEsat (BISS) transistor 2. Pinning information Table 3. Pin 1 2 3 4 5 6 7 8 Pinning Description emitter TR1 base TR1 emitter TR2 base TR2 collector TR2 collector TR2 collector TR...