PBSS4041PZ

PBSS4041PZ 60 V, 5.7 A PNP low VCEsat (BISS) transistor Rev. 01 — 31 March 2010 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) medium power Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS4041NZ. 1.2 Features and benefits „ Very low collector-emitter saturation voltage VCEsat „ High collector current capability IC and ICM „ High collector current gain (hFE) at high IC „ High energy efficiency due to less heat generation „ AEC-Q101 qualified „ Smaller required Printed-Circuit Board (PCB) area than for conventional transistors 1.3 Applications „ Loadswitch „ Battery-driven devices „ Power management „ Charging circuits „ Power switches (e.g. motors, fans) 1.4 Quick reference data Table 1. Symbol VCEO IC ICM RCEsat Quick reference data Parameter Conditions collector-emitter voltage open base collector current peak collector current collector-emitter saturation resistance single pulse; tp ≤ 1 ms IC = −5 A; IB = −500 mA [1] Pulse test: tp ≤ 300 μs; δ ≤ 0.02. Min Typ Max Unit - - −60 V - - −5.7 A - - −15 A [1] - 29 43.5 mΩ Nexperia PBSS4041PZ 60 V, 5.7 A PNP low VCEsat (BISS) transistor 2. Pinning information Table 2. Pin 1 2 3 4 Pinning Description base collector emitter collector Simplified outline Graphic symbol 4 2, 4 123 1 3 sym028 3. Ordering information Table 3. Ordering information Type number Package Name Description PBSS4041PZ S...