PBSS4160X

PBSS4160X 60 V, 1 A NPN low VCEsat BISS transistor 23 May 2017 Product data sheet 1. General description NPN low VCEsat Breakthrough in Smal Signal (BISS) transitor in a medium power SOT89 (SC-62) flat lead Surface-Mounted Device (SMD) plastic package. 2. Features and benefits Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High energy efficiency due to less heat generation AEC-Q101 qualified 3. Applications DC-to-DC conversion Supply line switches Battery charger LCD backlighting Driver in low supply voltage applications (e.g. lamps and LEDs) Inductive load driver (e.g. relays, buzzers and motors) 4. Quick reference data Table 1. Quick reference data Symbol Parameter VCEO collector-emitter voltage IC collector current ICM peak collector current hFE DC current gain Conditions open base single pulse; tp ≤ 1 ms VCE = 10 V; IC = 500 mA; Tamb = 25 °C [1] [1] Pulse test: tp ≤ 300 µs; δ ≤ 0.02 Min Typ Max Unit - - 60 V --170 - 1A 2A 360 Nexperia PBSS4160X 60 V, 1 A NPN low VCEsat BISS transistor 5. Pinning information Table 2. Pinning information Pin Symbol Description 1 E emitter 2 C collector 3 B base Simplified outline 321 SOT89 Graphic symbol C B E sym123 6. Ordering information Table 3. Ordering information Type number Package Name PBSS4160X SOT89 Description plastic, surface-mounted package; 3 leads; 1.5 mm pitch; 4.5 mm x 2.5 mm x 1.5 mm body Version SOT89 7. Marking Table 4. M...