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PBSS4440D Dataheets PDF



Part Number PBSS4440D
Manufacturers NXP
Logo NXP
Description NPN transistor
Datasheet PBSS4440D DatasheetPBSS4440D Datasheet (PDF)

PBSS4440D 40 V NPN low VCEsat (BISS) transistor Rev. 02 — 11 December 2009 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT457 (SC-74) SMD plastic package. PNP complement: PBSS5440D. 1.2 Features „ Ultra low collector-emitter saturation voltage VCEsat „ 4 A continuous collector current capability IC (DC) „ Up to 15 A peak current „ Very low collector-emitter saturation resistance „ High efficiency due to less.

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PBSS4440D 40 V NPN low VCEsat (BISS) transistor Rev. 02 — 11 December 2009 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT457 (SC-74) SMD plastic package. PNP complement: PBSS5440D. 1.2 Features „ Ultra low collector-emitter saturation voltage VCEsat „ 4 A continuous collector current capability IC (DC) „ Up to 15 A peak current „ Very low collector-emitter saturation resistance „ High efficiency due to less heat generation 1.3 Applications „ Power management functions „ Charging circuits „ DC-to-DC conversion „ MOSFET gate driving „ Power switches (e.g. motors, fans) „ Thin Film Transistor (TFT) backlight inverter 1.4 Quick reference data Table 1. Symbol VCEO IC ICM RCEsat Quick reference data Parameter Conditions Min collector-emitter voltage open base - collector current (DC) [1] - peak collector current collector-emitter saturation resistance t = 1 ms or limited by Tj(max) IC = 6 A; IB = 600 mA [2] - Typ - 55 [1] Device mounted on a ceramic Printed-Circuit Board (PCB), AL2O3, standard footprint. [2] Pulse test: tp ≤ 300 μs; δ ≤ 0.02. Max Unit 40 V 4A 15 A 75 mΩ NXP Semiconductors PBSS4440D 40 V NPN low VCEsat (BISS) transistor 2. Pinning information Table 2. Pin 1 2 3 4 5 6 Pinning Description collector collector base emitter collector collector Simplified outline Symbol 654 123 1, 2, 5, 6 3 4 sym014 3. Ordering information Table 3. Ordering information Type number Package Name Description PBSS4440D SC-74 plastic surface mounted package; 6 leads Version SOT457 4. Marking Table 4. Marking codes Type number PBSS4440D Marking code 61 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min VCBO VCEO VEBO IC ICM IB IBM Ptot collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current base current (DC) peak base current total power dissipation open emitter open base open collector t = 1 ms or limited by Tj(max) tp ≤ 300 μs Tamb ≤ 25 °C [1] - [2] [3] - [4] - [1] - [2][5] - Max Unit 60 V 40 V 5V 4A 15 A 0.8 A 2A 360 mW 600 mW 750 mW 1.1 W 2.5 W PBSS4440D_2 Product data sheet Rev. 02 — 11 December 2009 © NXP B.V. 2009. All rights reserved. 2 of 13 NXP Semiconductors PBSS4440D 40 V NPN low VCEsat (BISS) transistor Table 5. Limiting values …continued In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Tstg storage temperature −65 Tj Tamb junction temperature ambient temperature −65 Max +150 150 +150 Unit °C °C °C [1] Device mounted on a ceramic PCB, AL2O3, standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2. [4] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm2. [5] Operated under pulsed conditions: Duty cycle δ ≤ 10% and pulse width tp ≤ 10 ms. 1600 Ptot (mW) 1200 800 400 (1) (2) (3) (4) 006aaa270 0 −75 −25 25 75 (1) Ceramic PCB, AL2O3, standard footprint (2) FR4 PCB, mounting pad for collector 6 cm2 (3) FR4 PCB, mounting pad for collector 1 cm2 (4) FR4 PCB, standard footprint Fig 1. Power derating curves 125 175 Tamb (°C) PBSS4440D_2 Product data sheet Rev. 02 — 11 December 2009 © NXP B.V. 2009. All rights reserved. 3 of 13 NXP Semiconductors PBSS4440D 40 V NPN low VCEsat (BISS) transistor 6. Thermal characteristics Table 6. Symbol Rth(j-a) Thermal characteristics Parameter thermal resistance from junction to ambient Conditions in free air Rth(j-sp) thermal resistance from junction to solder point Min Typ Max Unit [1] - - 350 K/W [2] - - 208 K/W [3] - - 160 K/W [4] - - 113 K/W [1][5] - - 50 K/W - - 45 K/W [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2. [3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm2. [4] Device mounted on a ceramic PCB, AL2O3, standard footprint. [5] Operated under pulsed conditions: Duty cycle δ ≤ 10% and pulse width tp ≤ 10 ms. 103 Zth(j-a) (K/W) 102 10 duty cycle = 1 0.75 0.5 0.33 0.2 0.1 0.05 0.02 0.01 10 006aaa271 10−1 10−5 10−4 10−3 10−2 10−1 1 10 102 103 tp (s) FR4 PCB, standard footprint Fig 2. Transient thermal impedance from junction to ambient as a function of pulse time; typical values PBSS4440D_2 Product data sheet Rev. 02 — 11 December 2009 © NXP B.V. 2009. All rights reserved. 4 of 13 NXP Semiconductors PBSS4440D 40 V NPN low VCEsat (BISS) transistor 103 Zth(j-a) (K/W) 102 10 duty cycle = 1 0.75 0.5 0.33 0.2 0.1 0.05 0.02 0.01 1 0 006aaa2.


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