PBSS4360Z
60 V, 3 A NPN low VCEsat (BISS) transistor
26 February 2014
Product data sheet
1. General description
NPN lo...
PBSS4360Z
60 V, 3 A
NPN low VCEsat (BISS)
transistor
26 February 2014
Product data sheet
1. General description
NPN low VCEsat Breakthrough In Small Signal (BISS)
transistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package.
PNP complement: PBSS5360Z.
2. Features and benefits
Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High energy efficiency due to less heat generation AEC-Q101 qualified
3. Applications
DC-to-DC conversion Supply line switching Battery charger LCD backlighting Driver in low supply voltage applications (e.g. lamps and LEDs) Inductive load driver (e.g. relays, buzzers and motors)
4. Quick reference data
Table 1. Symbol VCEO
IC ICM RCEsat
Quick reference data Parameter
Conditions
collector-emitter voltage
open base
collector current
peak collector current tp ≤ 1 ms; single pulse
collector-emitter saturation resistance
IC = 2 A; IB = 200 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C
Min Typ Max Unit - - 60 V
- - 3A - - 6A - - 140 mΩ
Nexperia
PBSS4360Z
60 V, 3 A
NPN low VCEsat (BISS)
transistor
5. Pinning information
Table 2. Pinning information Pin Symbol Description 1 B base 2 C collector 3 E emitter 4 C collector
Simplified outline
4
123
SC-73 (SOT223)
Graphic symbol
2, 4
1
3 sym016
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
PBSS4360Z
SC-73
Description
plastic surface-mounted package with increased ...