PBSS4360X

PBSS4360X 60 V, 3 A NPN low VCEsat BISS transistor 9 June 2017 Product data sheet 1. General description NPN low VCEsat Breakthrough in Smal Signal (BISS) transitor in a medium power SOT89 (SC-62) flat lead Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS5360X 2. Features and benefits Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High energy efficiency due to less heat generation AEC-Q101 qualified 3. Applications DC-to-DC conversion Supply line switching Battery charger LCD backlighting Driver in low supply voltage applications (e.g. lamps and LEDs) Inductive load driver (e.g. relays, buzzers and motors) 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VCEO collector-emitter voltage open base - - 60 V IC ICM RCEsat collector current - - 3A peak collector current single pulse; tp ≤ 1 ms - - 6A collector-emitter IC = 2 A; IB = 200 mA; Tamb = 25 °C [1] - - 140 mΩ saturation resistance [1] Pulse test: tp ≤ 300 µs; δ ≤ 0.02 Nexperia PBSS4360X 60 V, 3 A NPN low VCEsat BISS transistor 5. Pinning information Table 2. Pinning information Pin Symbol Description 1 E emitter 2 C collector 3 B base Simplified outline 321 SOT89 Graphic symbol C B E sym123 6. Ordering information Table 3. Ordering information Type number Package Name PBSS4360X SOT89 Description plastic, surface-mounted package; 3 leads; 1.5 mm pitch; 4...