PBSS5350D

PBSS5350D 50 V, 3 A PNP low VCEsat (BISS) transistor Rev. 6 — 28 June 2011 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS4350D 1.2 Features and benefits  Low collector-emitter saturation voltage VCEsat  High current capability  High efficiency due to less heat generation  AEC-Q101 qualified  Smaller Printed-Circuit Board (PCB) area than for conventional transistors 1.3 Applications  Supply line switching circuits  Battery management applications  DC-to-DC conversion 1.4 Quick reference data Table 1. Symbol VCEO IC ICM RCEsat Quick reference data Parameter collector-emitter voltage collector current peak collector current collector-emitter saturation resistance Conditions open base IC = -2 A; IB = -200 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C Min Typ Max Unit - - -50 V - - -3 A - - -5 A - 120 150 mΩ Nexperia PBSS5350D 50 V, 3 A PNP low VCEsat (BISS) transistor 2. Pinning information Table 2. Pin 1 2 3 4 5 6 Pinning information Symbol Description C collector C collector B base E emitter C collector C collector 3. Ordering information Simplified outline 654 123 SOT457 (TSOP6) Graphic symbol 1, 2, 5, 6 3 4 sym030 Table 3. Ordering information Type number Package Name PBSS5350D TSOP6 4. Marking Description plastic surface-mounted package (TSOP6); 6 leads Version SOT457 ...