PBSS5350TH

PBSS5350TH 50 V, 3 A PNP low VCEsat (BISS) transistor 21 June 2017 Product data sheet 1. General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. 2. Features and benefits Low collector-emitter saturation voltage VCEsat High collector current capability: IC and ICM High collector current gain (hFE) at high IC Higher efficiency leading to less heat genereation High temperature applications up to 175 °C AEC-Q101 qualified 3. Applications Power management DC-to-DC conversion Supply line switches Battery charger switches Peripheral drivers Driver in low supply voltage applications (e.g. lamps and LEDs) Inductive load driver 4. Quick reference data Table 1. Quick reference data Symbol Parameter VCEO collector-emitter voltage IC collector current ICM peak collector current RCEsat collector-emitter saturation resistance Conditions open base pulsed single pulse; tp < 1 ms IC = -2 A; IB = -200 mA; Tamb = 25 °C [1] Pulse conditions: pulse width tp ≤ 100 ms; duty cycle δ ≤ 0.25 [2] Pulse test: tp ≤ 300 µs; δ ≤ 0.02 [1] [2] Min Typ Max Unit - - -50 V - - -2 A - - -3 A - - -5 A - - 135 mΩ Nexperia PBSS5350TH 50 V, 3 A PNP low VCEsat (BISS) transistor 5. Pinning information Table 2. Pinning information Pin Symbol Description 1 B base 2 E emitter 3 C collector Simplified outline 3 12 TO-236AB (SOT23) Graphic symbol C B E sym132 6. Ordering inf...