PHPT61002PYCLH

PHPT61002PYCLH 100 V, 2 A PNP high power bipolar transistor 13 July 2017 Product data sheet 1. General description PNP high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. NPN complement: PHPT61002NYCLH. 2. Features and benefits High thermal power dissipation capability Suitable for high temperature applications up to 175 °C Reduced Printed-Circuit Board (PCB) requirements comparing to transistors in DPAK High energy efficiency due to less heat generation 3. Applications Power management Load switch Linear mode voltage regulator Backlighting applications 4. Quick reference data Table 1. Quick reference data Symbol Parameter VCEO collector-emitter voltage IC ICM RCEsat collector current peak collector current collector-emitter saturation resistance Conditions open base single pulse; tp ≤ 1 ms IC = -2 A; IB = -200 mA; Tamb = 25 °C [1] Pulse test: tp ≤ 300 µs; δ ≤ 0.02 [1] Min Typ Max Unit - - -100 V - - -2 A - - -5 A - 150 250 mΩ Nexperia PHPT61002PYCLH 100 V, 2 A PNP high power bipolar transistor 5. Pinning information Table 2. Pinning information Pin Symbol Description 1 E emitter 2 E emitter 3 E emitter 4 B base mb C collector Simplified outline mb 1234 LFPAK56; PowerSO8 (SOT669) Graphic symbol C B E sym132 6. Ordering information Table 3. Ordering information Type number Package Name PHPT61002PYCLH LFPAK56; Power-SO8 Description Plastic single-ended surface-mounted pa...