PHPT61002NYCLH

PHPT61002NYCLH 100 V, 2 A NPN high power bipolar transistor 31 March 2017 Product data sheet 1. General description NPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. PNP complement: PHPT61002PYCLH 2. Features and benefits High thermal power dissipation capability High temperature applications up to 175 °C Reduced Printed Circuit Board (PCB) requirements comparing to transistors in DPAK High energy efficiency due to less heat generation 3. Applications Load switch Power management Linear mode voltage regulator Backlighting apllications 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VCEO collector-emitter voltage open base - - 100 V IC ICM RCEsat collector current - peak collector current single pulse; tp ≤ 1 ms - collector-emitter IC = 2 A; IB = 200 mA; Tamb = 25 °C [1] - saturation resistance - 2A - 6A 80 150 mΩ [1] pulsed; tp ≤ 300 µs; δ ≤ 0.02 Nexperia PHPT61002NYCLH 100 V, 2 A NPN high power bipolar transistor 5. Pinning information Table 2. Pinning information Pin Symbol Description 1 E emitter 2 E emitter 3 E emitter 4 B base mb C collector Simplified outline mb 1234 LFPAK56; PowerSO8 (SOT669) Graphic symbol C B E sym123 6. Ordering information Table 3. Ordering information Type number Package Name PHPT61002NYCLH LFPAK56; Power-SO8 Description Plastic single-ended surface-mounted package (LFPAK56; P...