PHPT60415NY

PHPT60415NY 40 V, 15 A NPN high power bipolar transistor 15 January 2019 Product data sheet 1. General description NPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. PNP complement: PHPT60415PY 2. Features and benefits High thermal power dissipation capability High temperature applications up to 175 °C Reduced Printed Circuit Board (PCB) requirements comparing to transistors in DPAK High energy efficiency due to less heat generation AEC-Q101 qualified. 3. Applications Power management Load switch Linear mode voltage regulator Backlighting applications Motor drive Relay replacement 4. Quick reference data Table 1. Quick reference data Symbol Parameter VCEO collector-emitter voltage IC ICM RCEsat collector current peak collector current collector-emitter saturation resistance Conditions open base single pulse; tp ≤ 1 ms IC = 15 A; IB = 1.5 A; tp ≤ 300 µs; pulsed; δ ≤ 0.02; Tamb = 25 °C Min Typ Max Unit - - 40 V - - 15 A - - 30 A - 28 40 mΩ Nexperia PHPT60415NY 40 V, 15 A NPN high power bipolar transistor 5. Pinning information Table 2. Pinning information Pin Symbol Description 1 E emitter 2 E emitter 3 E emitter 4 B base mb C collector Simplified outline mb 1234 LFPAK56; PowerSO8 (SOT669) Graphic symbol C B E sym123 6. Ordering information Table 3. Ordering information Type number Package Name PHPT60415NY LFPAK56; Power-SO8 Description Plastic single-ended surf...