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MMBZ16VTAL Dataheets PDF



Part Number MMBZ16VTAL
Manufacturers nexperia
Logo nexperia
Description High surge current unidirectional double ESD protection diodes
Datasheet MMBZ16VTAL DatasheetMMBZ16VTAL Datasheet (PDF)

MMBZ16VTAL High surge current unidirectional double ESD protection diodes 6 November 2017 Product data sheet 1. General description Unidirectional double ElectroStatic Discharge (ESD) protection diodes in a common anode configuration, encapsulated in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package. The device is designed for ESD and transient overvoltage protection of up to two signal lines. 2. Features and benefits • Unidirectional protection of two lines • Reverse s.

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MMBZ16VTAL High surge current unidirectional double ESD protection diodes 6 November 2017 Product data sheet 1. General description Unidirectional double ElectroStatic Discharge (ESD) protection diodes in a common anode configuration, encapsulated in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package. The device is designed for ESD and transient overvoltage protection of up to two signal lines. 2. Features and benefits • Unidirectional protection of two lines • Reverse standoff voltage: VRWM = 13 V • Average measured surge robustness: IPPM = 14 A (8/20 µs) / IPPM = 2.54 A (10/1000 µs) • Typical reverse leakage current: IRM = 0.1 nA • Tight breakdown voltage tolerance: ΔVBR +/- 2% • AEC-Q101 qualified 3. Applications • Automotive in-vehicle networks protection • Industrial application • Power management 4. Quick reference data Table 1. Quick reference data Symbol Parameter VRWM reverse standoff voltage IPPM rated peak pulse current VCL clamping voltage [1] According to IEC 61643-321. [2] Measured from pin 1 or 2 to pin 3. Conditions Tj = 25 °C Min Typ Max Unit - - 13 V tp = 10/1000 µs [1] [2] - - 1.9 A IPP = 1.7 A; tp = 10/1000 µs; Tj = 25 °C [1] [2] - 19.5 23 V Nexperia MMBZ16VTAL High surge current unidirectional double ESD protection diodes 5. Pinning information Table 2. Pinning information Pin Symbol Description 1 K1 cathode 2 K2 cathode 3 A common anode Simplified outline 3 Graphic symbol 3 12 TO-236AB (SOT23) 12 006aaa154 6. Ordering information Table 3. Ordering information Type number Package Name MMBZ16VTAL TO-236AB Description Version plastic, surface-mounted package; 3 terminals; 1.9 mm pitch; 2.9 SOT23 mm x 1.3 mm x 1 mm body 7. Marking Table 4. Marking codes Type number MMBZ16VTAL [1] % = placeholder for manufacturing site code Marking code[1] %HH MMBZ16VTAL Product data sheet All information provided in this document is subject to legal disclaimers. 6 November 2017 © Nexperia B.V. 2017. All rights reserved 2 / 12 Nexperia MMBZ16VTAL High surge current unidirectional double ESD protection diodes 8. Limiting values Table 5. Limiting values In accordance with the Aboluste Maximum Rating System (IEC 60134) Symbol Parameter Conditions PPPM rated peak pulse power tp = 8/20 µs tp = 10/1000 µs IPPM rated peak pulse current tp = 8/20 µs tp = 10/1000 µs Tj junction temperature Tamb ambient temperature Tstg storage temperature ESD maximum ratings VESD electrostatic discharge voltage IEC 61000-4-2; contact discharge IEC 61000-4-2; air discharge [1] According to IEC 61000-4-5. [2] Measured from pin 1 or 2 to pin 3. [3] According to IEC 61643-321. [4] Device stressed with ten non-repetitive ESD pulses. 120 IPP (%) 100 % IPP; 8 µs 001aaa630 IPP 100 % 90 % 80 e-t 50 % IPP; 20 µs 40 [1] [2] [3] [2] [1] [2] [3] [2] Min -55 -65 Max Unit 300 W 45 W 11 A 1.9 A 150 °C 150 °C 150 °C [4] [2] [4] [2] - 30 kV 30 kV 001aaa631 0 0 10 20 30 40 t (µs) Fig. 1. 8/20 µs pulse waveform according to IEC 61000-4-5 10 % tr = 0.6 ns to 1 ns 30 ns 60 ns Fig. 2. ESD pulse waveform according to IEC 61000-4-2 t MMBZ16VTAL Product data sheet All information provided in this document is subject to legal disclaimers. 6 November 2017 © Nexperia B.V. 2017. All rights reserved 3 / 12 Nexperia MMBZ16VTAL High surge current unidirectional double ESD protection diodes 150 IPP (%) 100 100 % IPP; 10 µs 006aab319 50 % IPP; 1000 µs 50 0 0 1.0 2.0 3.0 4.0 tp (ms) Fig. 3. 10/1000 µs pulse waveform according to IEC 61643-321 9. Characteristics Table 6. Characteristics Symbol Parameter VRWM reverse standoff voltage VBR breakdown voltage IRM reverse leakage current Cd diode capacitance VCL clamping voltage [1] Measured from pin 1 or 2 to pin 3. [2] According to IEC 61000-4-5. [3] According to IEC 61643-321. Conditions Tj = 25 °C Min Typ Max Unit - - 13 V IR = 1 mA; Tj = 25 °C VRWM = 13 V; Tj = 25 °C [1] 15.68 16 16.32 V [1] - 0.1 5 nA f = 1 MHz; VR = 0 V; Tj = 25 °C IPP = 11 A; tp = 8/20 µs; Tj = 25 °C IPP = 1.7 A; tp = 10/1000 µs; Tj = 25 °C [1] [2] [1] [3] [1] - 76 95 23 28 19.5 23 pF V V MMBZ16VTAL Product data sheet All information provided in this document is subject to legal disclaimers. 6 November 2017 © Nexperia B.V. 2017. All rights reserved 4 / 12 Nexperia MMBZ16VTAL High surge current unidirectional double ESD protection diodes I - VCL - VBR - VRWM -+ P-N - IRM - IR V - IPP - IPPM 006aab324 Fig. 4. V-I characteristics for a unidirectional TVS protection diode Cd 90 (pF) 80 aaa-027130 70 60 50 40 30 20 10 0 0 4 8 12 16 VR (V) Fig. 6. Diode capacitance as a function of reverse voltage; typical values 1.2 PPPM PPPM(25°C) 0.8 006aab321 0.4 0 0 50 100 150 200 Tj (°C) Fig. 5. Relative variation of rated peak pulse power as a function of junction temperature; typical values 120 PPPM (W) 100 aaa-027131 80 60 40 20 0 102 103 tp 104 .


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