Document
MMBZ16VTAL
High surge current unidirectional double ESD protection
diodes
6 November 2017
Product data sheet
1. General description
Unidirectional double ElectroStatic Discharge (ESD) protection diodes in a common anode configuration, encapsulated in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package. The device is designed for ESD and transient overvoltage protection of up to two signal lines.
2. Features and benefits
• Unidirectional protection of two lines • Reverse standoff voltage: VRWM = 13 V • Average measured surge robustness: IPPM = 14 A (8/20 µs) / IPPM = 2.54 A (10/1000 µs) • Typical reverse leakage current: IRM = 0.1 nA • Tight breakdown voltage tolerance: ΔVBR +/- 2% • AEC-Q101 qualified
3. Applications
• Automotive in-vehicle networks protection • Industrial application • Power management
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
VRWM
reverse standoff voltage
IPPM rated peak pulse current
VCL clamping voltage
[1] According to IEC 61643-321. [2] Measured from pin 1 or 2 to pin 3.
Conditions Tj = 25 °C
Min Typ Max Unit - - 13 V
tp = 10/1000 µs
[1] [2] - - 1.9 A
IPP = 1.7 A; tp = 10/1000 µs; Tj = 25 °C [1] [2] -
19.5 23
V
Nexperia
MMBZ16VTAL
High surge current unidirectional double ESD protection diodes
5. Pinning information
Table 2. Pinning information Pin Symbol Description 1 K1 cathode 2 K2 cathode 3 A common anode
Simplified outline
3
Graphic symbol
3
12
TO-236AB (SOT23)
12 006aaa154
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
MMBZ16VTAL
TO-236AB
Description
Version
plastic, surface-mounted package; 3 terminals; 1.9 mm pitch; 2.9 SOT23 mm x 1.3 mm x 1 mm body
7. Marking
Table 4. Marking codes Type number MMBZ16VTAL
[1] % = placeholder for manufacturing site code
Marking code[1] %HH
MMBZ16VTAL
Product data sheet
All information provided in this document is subject to legal disclaimers.
6 November 2017
© Nexperia B.V. 2017. All rights reserved
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Nexperia
MMBZ16VTAL
High surge current unidirectional double ESD protection diodes
8. Limiting values
Table 5. Limiting values In accordance with the Aboluste Maximum Rating System (IEC 60134)
Symbol
Parameter
Conditions
PPPM
rated peak pulse power tp = 8/20 µs
tp = 10/1000 µs
IPPM rated peak pulse current tp = 8/20 µs
tp = 10/1000 µs
Tj junction temperature
Tamb
ambient temperature
Tstg storage temperature
ESD maximum ratings
VESD
electrostatic discharge voltage
IEC 61000-4-2; contact discharge IEC 61000-4-2; air discharge
[1] According to IEC 61000-4-5. [2] Measured from pin 1 or 2 to pin 3. [3] According to IEC 61643-321. [4] Device stressed with ten non-repetitive ESD pulses.
120
IPP (%)
100 % IPP; 8 µs
001aaa630
IPP 100 % 90 %
80 e-t
50 % IPP; 20 µs 40
[1] [2] [3] [2] [1] [2] [3] [2]
Min -55 -65
Max Unit 300 W 45 W 11 A 1.9 A 150 °C 150 °C 150 °C
[4] [2] [4] [2] -
30 kV 30 kV
001aaa631
0 0 10 20 30 40 t (µs)
Fig. 1. 8/20 µs pulse waveform according to IEC 61000-4-5
10 %
tr = 0.6 ns to 1 ns 30 ns
60 ns
Fig. 2. ESD pulse waveform according to IEC 61000-4-2
t
MMBZ16VTAL
Product data sheet
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6 November 2017
© Nexperia B.V. 2017. All rights reserved
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Nexperia
MMBZ16VTAL
High surge current unidirectional double ESD protection diodes
150
IPP (%)
100
100 % IPP; 10 µs
006aab319
50 % IPP; 1000 µs 50
0 0 1.0 2.0 3.0 4.0 tp (ms)
Fig. 3. 10/1000 µs pulse waveform according to IEC 61643-321
9. Characteristics
Table 6. Characteristics
Symbol
Parameter
VRWM
reverse standoff voltage
VBR breakdown voltage
IRM reverse leakage current
Cd diode capacitance
VCL clamping voltage
[1] Measured from pin 1 or 2 to pin 3. [2] According to IEC 61000-4-5. [3] According to IEC 61643-321.
Conditions Tj = 25 °C
Min Typ Max Unit - - 13 V
IR = 1 mA; Tj = 25 °C VRWM = 13 V; Tj = 25 °C
[1] 15.68 16 16.32 V
[1] -
0.1 5
nA
f = 1 MHz; VR = 0 V; Tj = 25 °C IPP = 11 A; tp = 8/20 µs; Tj = 25 °C IPP = 1.7 A; tp = 10/1000 µs; Tj = 25 °C
[1] [2] [1] [3] [1]
-
76 95 23 28 19.5 23
pF V V
MMBZ16VTAL
Product data sheet
All information provided in this document is subject to legal disclaimers.
6 November 2017
© Nexperia B.V. 2017. All rights reserved
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Nexperia
MMBZ16VTAL
High surge current unidirectional double ESD protection diodes
I
- VCL - VBR - VRWM
-+ P-N
- IRM - IR
V
- IPP - IPPM
006aab324
Fig. 4. V-I characteristics for a unidirectional TVS protection diode
Cd 90 (pF)
80
aaa-027130
70
60
50
40
30
20
10
0 0 4 8 12 16 VR (V)
Fig. 6. Diode capacitance as a function of reverse voltage; typical values
1.2
PPPM PPPM(25°C)
0.8
006aab321
0.4
0 0 50 100 150 200 Tj (°C)
Fig. 5. Relative variation of rated peak pulse power as a function of junction temperature; typical values
120 PPPM (W)
100
aaa-027131
80
60
40
20
0 102
103 tp
104
.