Document
PTVS5V0Z1BSC
Ultra compact transient voltage suppressor
6 February 2019
Product data sheet
1. General description
Transient voltage suppressor in an ultra small and leadless DSN1006-2 (SOD993B) SurfaceMounted Device (SMD) package designed to protect one line against high surge currents and other transients.
2. Features and benefits
• Bidirectional ESD protection of one line • Very high surge robustness; IPPM = 71 A (measured) for 8/20 μs pulse • Very low clamping voltage: VCL = 12 V typ. for 60 A at 8/20μs pulse • ESD protection up to 30 kV
3. Applications
Surge protection for • supply and battery lines • audio interfaces in portable communication, consumer and computing devices.
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
VRWM
reverse standoff voltage
IPPM
rated peak pulse current
VCL clamping voltage
Conditions Tamb = 25 °C
tp = 8/20 µs; Tamb = 25 °C
[1]
IPPM = 60 A; tp = 8/20 µs; Tamb = 25 °C [1]
[1] In accordance with IEC 61000-4-5 (8/20 µs current waveform).
Min Typ Max Unit - - 5V
- - 60 A
- 12 14 V
Nexperia
PTVS5V0Z1BSC
Ultra compact transient voltage suppressor
5. Pinning information
Table 2. Pinning information Pin Symbol Description 1 K1 cathode (diode 1) 2 K2 cathode (diode 2)
Simplified outline
12
Graphic symbol
K1 K2 sym045
Transparent top view
DSN1006-2 (SOD993B)
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
PTVS5V0Z1BSC
DSN1006-2
Description
DSN1006-2, leadless ultra small package; 2 terminals; body 1.0 x 0.6 x 0.27 mm
Version SOD993B
7. Marking
Table 4. Marking codes Type number PTVS5V0Z1BSC
Marking code S6
8. Limiting values
Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
IPPM
rated peak pulse current
Tj junction temperature
Tamb
ambient temperature
Tstg storage temperature
ESD maximum ratings
VESD
electrostatic discharge voltage
Conditions tp = 8/20 µs; Tamb = 25 °C
IEC 61000-4-2; contact discharge IEC 61000-4-2; air discharge
[1] In accordance with IEC 61000-4-5 (8/20 µs current waveform). [2] Device stressed with ten non-repetitive ESD pulses.
Min Max Unit
[1] -
60 A
- 150 °C
-55 150 °C
-65 150 °C
[2] [2] -
30 kV 30 kV
PTVS5V0Z1BSC
Product data sheet
All information provided in this document is subject to legal disclaimers.
6 February 2019
© Nexperia B.V. 2019. All rights reserved
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Nexperia
120 IPP (%)
80
40
100 % IPP; 8 µs
001aaa630
e-t 50 % IPP; 20 µs
PTVS5V0Z1BSC
Ultra compact transient voltage suppressor
IPP 100 % 90 %
0 0 10 20 30 40 t (µs)
Fig. 1. 8/20 µs pulse waveform according to IEC 61000-4-5
10 %
tr = 0.6 ns to 1 ns 30 ns
60 ns
t
001aaa631
Fig. 2. ESD pulse waveform according to IEC 61000-4-2
9. Characteristics
Table 6. Characteristics
Symbol
Parameter
Conditions
VRWM
reverse standoff voltage
Tamb = 25 °C
VBR IRM Cd VCL
Rdyn
breakdown voltage
IR = 10 mA; Tamb = 25 °C
reverse leakage current VR = 5 V; Tamb = .