Document
DISCRETE SEMICONDUCTORS
DATA SHEET
dbook, halfpage
MBD127
BZA800AVL series Quadruple low capacitance ESD suppressor
Product data sheet Supersedes data of 2003 Apr 01
2003 Oct 20
NXP Semiconductors
Quadruple low capacitance ESD suppressor
Product data sheet
BZA800AVL series
FEATURES • Low diode capacitance • Low leakage current • SOT353 (SC-88A) surface mount package • Common anode configuration.
APPLICATIONS • Communication systems • Computers and peripherals • Audio and video equipment.
PINNING
PIN 1 2 3 4 5
DESCRIPTION cathode 1 common anode cathode 2 cathode 3 cathode 4
DESCRIPTION
Monolithic transient voltage suppressor diode in a five lead SOT353 (SC-88A) package for 4-bit wide ESD transient suppression.
MARKING
TYPE NUMBER BZA856AVL BZA862AVL BZA868AVL
MARKING CODE R3 R2 R1
handbook, halfpage5
4
123
1
3 2
4
5
MGT580
Fig.1 Simplified outline (SOT353; SC-88A) and symbol.
ORDERING INFORMATION
TYPE NUMBER
BZA856AVL BZA862AVL BZA868AVL
NAME − − −
PACKAGE
DESCRIPTION plastic surface mounted package; 5 leads plastic surface mounted package; 5 leads plastic surface mounted package; 5 leads
VERSION SOT353 SOT353 SOT353
2003 Oct 20
2
NXP Semiconductors
Quadruple low capacitance ESD suppressor
Product data sheet
BZA800AVL series
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
Per diode
IZ IF IFSM Ptot PZSM
Tstg Tj ESD
working current continuous forward current non-repetitive peak forward current total power dissipation non repetitive peak reverse power dissipation storage temperature junction temperature electrostatic discharge
CONDITIONS
MIN.
Tamb = 25 °C Tamb = 25 °C tp = 1 ms; square pulse Tamb = 25 °C; note 2; see Fig.5 square pulse; tp = 1 ms
− − − − −
IEC 61000-4-2 (contact discharge) HBM MIL-Std 883
−65 − 15 10
Notes 1. DC working current limited by Ptot(max). 2. Device mounted on standard printed-circuit board.
MAX. UNIT
note 1 200 3.5 300 6
mA mA A mW W
+150 150 − −
°C °C kV kV
ESD STANDARDS COMPLIANCE
STANDARD IEC 61000-4-2, level 4 (ESD) HBM MIL-Std 883, class 3
CONDITIONS >15 kV (air); >8 kV (contact discharge) >4 kV
THERMAL CHARACTERISTICS
SYMBOL Rth j-a
Rth j-s
PARAMETER
thermal resistance from junction to ambient
thermal resistance from junction to solder point; note 1
Note 1. Solder point of common anode (pin 2).
CONDITIONS all diodes loaded
one diode loaded all diodes loaded
VALUE 410
200 185
UNIT K/W
K/W K/W
2003 Oct 20
3
NXP Semiconductors
Quadruple low capacitance ESD suppressor
Product data sheet
BZA800AVL series
ELECTRICAL CHARACTERISTICS Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
VF forward voltage IR reverse current
BZA856AVL BZA862AVL BZA868AVL VZ working voltage BZA856AVL BZA862AVL BZA868AVL rdif differential resistance BZA856AVL BZA862AVL BZA868AVL SZ temperature coefficient BZA856AVL BZA862AVL BZA868AVL Cd diode capacitance BZA856AVL BZA862AVL BZA868AVL diode capacitance BZA856AVL BZA862AVL BZA868AV.