PESD5V0U2BMB

PESD5V0U2BMB Ultra low capacitance bidirectional double ESD protection array 5 December 2018 Product data sheet 1. General description Ultra low capacitance bidirectional double ElectroStatic Discharge (ESD) protection array designed to protect up to two signal lines from the damage caused by ESD and other transients. The device is housed in a leadless ultra small SOT883B (DFN1006B-3) Surface-Mounted Device (SMD) plastic package. 2. Features and benefits ESD protection of up to two lines Ultra low diode capacitance: Cd = 2.9 pF Ultra low leakage current: IRM = 5 nA AEC-Q101 qualified ESD protection up to 10 kV IEC 61000-4-2; level 4 (ESD) 3. Applications Computers and peripherals Audio and video equipment Cellular handsets and accessories Communication systems Portable electronics SIM card protection High-speed data lines 4. Quick reference data Table 1. Quick reference data Symbol Parameter VRWM reverse standoff voltage Cd diode capacitance Conditions Tamb = 25 °C f = 1 MHz; VR = 0 V; Tamb = 25 °C Min Typ Max Unit - - 5V - 2.9 3.5 pF Nexperia PESD5V0U2BMB Ultra low capacitance bidirectional double ESD protection array 5. Pinning information Table 2. Pinning information Pin Symbol Description 1 K1 cathode (diode 1) 2 K2 cathode (diode 2) 3 CC common cathode Simplified outline 1 3 2 Transparent top view DFN1006B-3 (SOT883B) Graphic symbol K1 CC K2 006aab331 6. Ordering information Table 3. Ordering information Type number Pack...