diode. BAS16TH Datasheet

BAS16TH Datasheet PDF


Part

BAS16TH

Description

High-speed switching diode

Manufacture

nexperia

Page 10 Pages
Datasheet
Download BAS16TH Datasheet


BAS16TH Datasheet
BAS16TH
High-speed switching diode
7 December 2018
Product data sheet
1. General description
High-speed switching diode, encapsulated in a small SOT23 (TO-236AB) Surface-Mounted Device
(SMD) plastic package.
2. Features and benefits
High switching speed: trr ≤ 4 ns
Low leakage current
Repetitive peak reverse voltage VRRM ≤ 100 V
Low capacitance
Small SMD plastic package
High-temperature applications up to 175 °C
AEC-Q101 qualified
3. Applications
High-speed switching
General-purpose switching
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
Min Typ
VRRM
repetitive peak reverse Tj = 25 °C
voltage
--
IF forward current
[1] -
-
VR reverse voltage
--
VF
forward voltage
IF = 150 mA
[2] -
-
IR
reverse current
VR = 80 V; Tj = 25 °C
--
trr
reverse recovery time IF = 10 mA; IR = 10 mA; RL = 100 Ω;
--
IR(meas) = 1 mA; Tamb = 25 °C
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-side copper, tin-plated and standard footprint.
[2] Pulsed test: tp ≤ 300 μs; δ ≤ 0.02
Max Unit
100 V
215 mA
100 V
1.25 V
0.5 µA
4 ns

BAS16TH Datasheet
Nexperia
BAS16TH
High-speed switching diode
5. Pinning information
Table 2. Pinning information
Pin Symbol Description
1 A anode
2 n.c. not connected
3 K cathode
Simplified outline
3
Graphic symbol
K
A n.c.
006aaa764
12
TO-236AB (SOT23)
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
BAS16TH
TO-236AB
Description
Version
plastic, surface-mounted package; 3 terminals; 1.9 mm pitch; 2.9 SOT23
mm x 1.3 mm x 1 mm body
7. Marking
Table 4. Marking codes
Type number
BAS16TH
[1] % = placeholder for manufacturing site code
Marking code[1]
SP%
BAS16TH
Product data sheet
All information provided in this document is subject to legal disclaimers.
7 December 2018
© Nexperia B.V. 2018. All rights reserved
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Features Datasheet pdf BAS16TH High-speed switching diode 7 Dec ember 2018 Product data sheet 1. Gene ral description High-speed switching di ode, encapsulated in a small SOT23 (TO- 236AB) Surface-Mounted Device (SMD) pla stic package. 2. Features and benefits • High switching speed: trr ≤ 4 ns • Low leakage current • Repetitive peak reverse voltage VRRM ≤ 100 V Low capacitance • Small SMD plastic package • High-temperature applicati ons up to 175 °C • AEC-Q101 qualifie d 3. Applications • High-speed switc hing • General-purpose switching 4. Quick reference data Table 1. Quick re ference data Symbol Parameter Condit ions Min Typ VRRM repetitive peak re verse Tj = 25 °C voltage -- IF forwa rd current [1] - - VR reverse voltag e -- VF forward voltage IF = 150 mA [2] - - IR reverse current VR = 8 0 V; Tj = 25 °C -- trr reverse reco very time IF = 10 mA; IR = 10 mA; RL = 100 Ω; -- IR(meas) = 1 mA; Tamb = 25 °C [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-side copper, tin-pl.
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