HITFET - BTS3125TF
Smart Low-Side Power Switch
1 Overview
Basic Features • Single channel device • Very low output leak...
HITFET - BTS3125TF
Smart Low-Side Power Switch
1 Overview
Basic Features Single channel device Very low output leakage current in OFF state Electrostatic discharge protection (ESD) Embedded protection functions (see below) Green Product (RoHS compliant) AEC Qualified
Applications Suitable for resistive, inductive and capacitive loads Replaces electromechanical relays, fuses and discrete circuits
Description The BTS3125TF is a 125 mΩ single channel Smart Low-Side Power Switch within a PG-TO252-3 package providing embedded protective functions. The power
transistor is built by an N-channel vertical power MOSFET. The device is monolithically integrated. The BTS3125TF is automotive qualified and is optimized for 12 V automotive applications.
Type BTS3125TF
Package PG-TO252-3
Marking S3125TF
Table 1 Product Summary Operating voltage range Maximum load voltage Maximum input voltage Maximum On-State resistance at TJ = 150°C, VIN = 5 V Nominal load current Minimum current limitation Maximum OFF state load current at TJ ≤ 85°C
VOUT VBAT(LD) VIN RDS(ON) IL(NOM) IL(LIM) IL(OFF)_85
0 .. 31 V 40 V 5.5 V 250 mΩ 2A 7A 0.6 µA
Datasheet
www.infineon.com/hitfet
1
Rev. 1.0 2016-06-01
HITFET - BTS3125TF
Smart Low-Side Power Switch
Overview
Protection Functions Over temperature shut-down with automatic-restart Active clamp over voltage protection Current limitation
Detailed Description The device is able to switch all kind of resistive, inductive and capacitive lo...