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BTS3125TF

Infineon

Smart Low-Side Power Switch

HITFET - BTS3125TF Smart Low-Side Power Switch 1 Overview Basic Features • Single channel device • Very low output leak...


Infineon

BTS3125TF

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Description
HITFET - BTS3125TF Smart Low-Side Power Switch 1 Overview Basic Features Single channel device Very low output leakage current in OFF state Electrostatic discharge protection (ESD) Embedded protection functions (see below) Green Product (RoHS compliant) AEC Qualified Applications Suitable for resistive, inductive and capacitive loads Replaces electromechanical relays, fuses and discrete circuits Description The BTS3125TF is a 125 mΩ single channel Smart Low-Side Power Switch within a PG-TO252-3 package providing embedded protective functions. The power transistor is built by an N-channel vertical power MOSFET. The device is monolithically integrated. The BTS3125TF is automotive qualified and is optimized for 12 V automotive applications. Type BTS3125TF Package PG-TO252-3 Marking S3125TF Table 1 Product Summary Operating voltage range Maximum load voltage Maximum input voltage Maximum On-State resistance at TJ = 150°C, VIN = 5 V Nominal load current Minimum current limitation Maximum OFF state load current at TJ ≤ 85°C VOUT VBAT(LD) VIN RDS(ON) IL(NOM) IL(LIM) IL(OFF)_85 0 .. 31 V 40 V 5.5 V 250 mΩ 2A 7A 0.6 µA Datasheet www.infineon.com/hitfet 1 Rev. 1.0 2016-06-01 HITFET - BTS3125TF Smart Low-Side Power Switch Overview Protection Functions Over temperature shut-down with automatic-restart Active clamp over voltage protection Current limitation Detailed Description The device is able to switch all kind of resistive, inductive and capacitive lo...




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