diode. BAS86 Datasheet

BAS86 Datasheet PDF


Part

BAS86

Description

Schottky barrier single diode

Manufacture

nexperia

Page 9 Pages
Datasheet
Download BAS86 Datasheet


BAS86 Datasheet
BAS86
Schottky barrier single diode
25 July 2012
Product data sheet
1. Product profile
1.1 General description
Planar Schottky barrier diode with an integrated guard ring for stress protection,
encapsulated in a small hermetically sealed SOD80C glass Surface-Mounted Device
(SMD) package with tin-plated metal discs at each end. It is suitable for “automatic
placement” and as such it can withstand immersion soldering.
1.2 Features and benefits
Low forward voltage
High breakdown voltage
Guard ring protected
Hermetically sealed glass SMD package.
1.3 Applications
Ultra high-speed switching
Voltage clamping
Protection circuits
Blocking diodes
1.4 Quick reference data
Table 1.
Symbol
IF(AV)
VR
VF
Quick reference data
Parameter
average forward
current
reverse voltage
forward voltage
Conditions
IF = 100 mA; Tamb = 25 °C
Min Typ Max Unit
[1] - - 200 mA
- - 50 V
- - 900 mV
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.

BAS86 Datasheet
Nexperia
BAS86
Schottky barrier single diode
2. Pinning information
Table 2.
Pin
1
2
Pinning information
Symbol Description
K cathode[1]
A anode
Simplified outline
Graphic symbol
ka
LLDS; MiniMelf (SOD80C)
KA
aaa-003679
[1] The marking band indicates the cathode.
3. Ordering information
Table 3. Ordering information
Type number
Package
Name
BAS86
LLDS;
MiniMelf
Description
hermetically sealed glass surface-mounted package; 2
connectors
Version
SOD80C
4. Marking
Table 4. Marking codes
Type number
BAS86
Marking code
marking band
5. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
VR reverse voltage
IF forward current
IF(AV)
average forward current
IFRM repetitive peak forward current tp ≤ 1 s; δ ≤ 0.5
IFSM
non-repetitive peak forward
tp = 10 ms; Tj(init) = 25 °C
current
Tj junction temperature
Tamb
ambient temperature
Tstg storage temperature
Min Max Unit
- 50 V
- 200 mA
[1] -
200 mA
- 500 mA
- 5A
- 125 °C
-65 125 °C
-65 150 °C
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
BAS86
Product data sheet
All information provided in this document is subject to legal disclaimers.
25 July 2012
© Nexperia B.V. 2017. All rights reserved
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Features Datasheet pdf BAS86 Schottky barrier single diode 25 J uly 2012 Product data sheet 1. Produc t profile 1.1 General description Plan ar Schottky barrier diode with an integ rated guard ring for stress protection, encapsulated in a small hermetically s ealed SOD80C glass Surface-Mounted Devi ce (SMD) package with tin-plated metal discs at each end. It is suitable for automatic placement” and as such it can withstand immersion soldering. 1. 2 Features and benefits • Low forward voltage • High breakdown voltage • Guard ring protected • Hermetically sealed glass SMD package. 1.3 Applicat ions • Ultra high-speed switching • Voltage clamping • Protection circui ts • Blocking diodes 1.4 Quick refer ence data Table 1. Symbol IF(AV) VR VF Quick reference data Parameter averag e forward current reverse voltage forwa rd voltage Conditions IF = 100 mA; Tam b = 25 °C Min Typ Max Unit [1] - - 20 0 mA - - 50 V - - 900 mV [1] Device mo unted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and sta.
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