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BAT54VV Dataheets PDF



Part Number BAT54VV
Manufacturers nexperia
Logo nexperia
Description Schottky barrier triple diode
Datasheet BAT54VV DatasheetBAT54VV Datasheet (PDF)

BAT54VV Schottky barrier triple diode in ultra small SOT666 package Rev. 02 — 15 January 2010 Product data sheet 1. Product profile 1.1 General description Planar Schottky barrier triple diode with an integrated guard ring for stress protection. Three electrically isolated Schottky barrier diodes, encapsulated in a SOT666 ultra small SMD plastic package. 1.2 Features „ Low forward voltage „ Ultra small SMD plastic package „ Low capacitance „ Flat leads: excellent coplanarity and improved t.

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BAT54VV Schottky barrier triple diode in ultra small SOT666 package Rev. 02 — 15 January 2010 Product data sheet 1. Product profile 1.1 General description Planar Schottky barrier triple diode with an integrated guard ring for stress protection. Three electrically isolated Schottky barrier diodes, encapsulated in a SOT666 ultra small SMD plastic package. 1.2 Features „ Low forward voltage „ Ultra small SMD plastic package „ Low capacitance „ Flat leads: excellent coplanarity and improved thermal behavior 1.3 Applications „ Ultra high-speed switching „ Voltage clamping „ Line termination „ Inverse-polarity protection 1.4 Quick reference data Table 1. Symbol VR IF Quick reference data Parameter Conditions continuous reverse voltage continuous forward current Min Typ Max Unit - - 30 V - - 200 mA 2. Pinning information Table 2. Pin 1 2 3 4 5 6 Pinning Description anode (diode 1) anode (diode 2) anode (diode 3) cathode (diode 3) cathode (diode 2) cathode (diode 1) Simplified outline Symbol 65 4 654 123 SOT666 123 sym046 Nexperia BAT54VV Schottky barrier triple diode in ultra small SOT666 package 3. Ordering information Table 3. Ordering information Type number Package Name Description BAT54VV - plastic surface mounted package; 6 leads Version SOT666 4. Marking Table 4. Marking codes Type number BAT54VV Marking code C6 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Per diode VR continuous reverse voltage IF continuous forward current IFRM repetitive peak forward tp ≤ 1 s; δ ≤ 0.5 current - IFSM non-repetitive peak forward tp < 10 ms current - Ptot Tj Tamb Tstg total power dissipation junction temperature ambient temperature storage temperature Tamb ≤ 25 °C [1][2] −65 −65 Max Unit 30 V 200 mA 300 mA 600 mA 170 125 +125 +150 mW °C °C °C [1] Device mounted on a FR4 printed-circuit board, single-sided copper, tin-plated and standard footprint. [2] Single diode loaded. 6. Thermal characteristics Table 6. Symbol Rth(j-a) Thermal characteristics Parameter thermal resistance from junction to ambient Conditions in free air [1] Refer to SOT666 standard mounting conditions. [2] Reflow soldering is the only recommended soldering method. Min Typ Max Unit [1][2] - - 590 K/W BAT54VV_2 Product data sheet Rev. 02 — 15 January 2010 2 of 9 © Nexperia B.V. 2017. All rights reserved Nexperia BAT54VV Schottky barrier triple diode in ultra small SOT666 package 7. Characteristics Table 7. Characteristics Tamb = 25 °C unless otherwise specified. Symbol Parameter Conditions Per diode VF forward voltage see Figure 1; IF = 0.1 mA IF = 1 mA IF = 10 mA IF = 30 mA IF = 100 mA IR reverse current VR = 25 V; see Figure 2 Cd diode capacitance VR = 1 V; f = 1 MHz; see Figure 3 [1] Pulse test: tp ≤ 300 μs; δ ≤ 0.02. Min Typ Max Unit [1] - - 240 mV - - 320 mV - - 400 mV - - 500 mV - - 800 mV - - 2 μA - - 10 pF BAT54VV_2 Product data sheet Rev. 02 — 15 January 2010 3 of 9 © Nexperia B.V. 2017. All rights reserved Nexperia BAT54VV Schottky barrier triple diode in ultra small SOT666 package 103 IF (mA) 102 (1) (2) (3) msa892 10 (1) (2) (3) 1 10−1 0 0.4 0.8 1.2 VF (V) (1) Tamb = 125 °C (2) Tamb = 85 °C (3) Tamb = 25 °C Fig 1. Forward current as a function of forward voltage; typical values 15 Cd (pF) 10 103 IR (μA) 102 10 msa893 (1) (2) 1 (3) 10−1 0 10 20 VR (V) 30 (1) Tamb = 125 °C (2) Tamb = 85 °C (3) Tamb = 25 °C Fig 2. Reverse current as a function of reverse voltage; typical values msa891 5 0 0 10 20 VR (V) 30 Tamb = 25 °C; f = 1 MHz Fig 3. Diode capacitance as a function of reverse voltage; typical values BAT54VV_2 Product data sheet Rev. 02 — 15 January 2010 4 of 9 © Nexperia B.V. 2017. All rights reserved Nexperia BAT54VV Schottky barrier triple diode in ultra small SOT666 package 8. Package outline Plastic surface-mounted package; 6 leads SOT666 DA EX S YS 65 4 HE pin 1 index 12 e1 bp e 3 wM A A detail X c Lp 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A bp c D E e e1 HE Lp mm 0.6 0.27 0.18 1.7 0.5 0.17 0.08 1.5 1.3 1.1 1.0 0.5 1.7 1.5 0.3 0.1 wy 0.1 0.1 OUTLINE VERSION SOT666 IEC REFERENCES JEDEC JEITA Fig 4. Package outline SOT666. BAT54VV_2 Product data sheet Rev. 02 — 15 January 2010 EUROPEAN PROJECTION ISSUE DATE 04-11-08 06-03-16 5 of 9 © Nexperia B.V. 2017. All rights reserved Nexperia BAT54VV Schottky barrier triple diode in ultra small SOT666 package 9. Packing information Table 8. Packing methods The indicated -xxx are the last three digits of the 12NC ordering code.[1] Type number Package Description BAT54VV SOT666 4 mm pitch, 8 mm tape and reel [1] For further information and the availability of packing methods, see Section 12. Packing quantity 4 000 -115 BAT54VV_2 Product data sheet Rev. 02 — 15 J.


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