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PMEG2002AESFB Dataheets PDF



Part Number PMEG2002AESFB
Manufacturers nexperia
Logo nexperia
Description MEGA Schottky barrier rectifier
Datasheet PMEG2002AESFB DatasheetPMEG2002AESFB Datasheet (PDF)

PMEG2002AESFB 20 V, 0.2 A low VF MEGA Schottky barrier rectifier 17 August 2017 Product data sheet 1. General description Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an integrated guard ring for stress protection in a DSN0603B-2 (SOD962B) leadless ultra small Surface-Mounted Device (SMD) package. 2. Features and benefits • Average forward current IF(AV) ≤ 0.2 A • Reverse voltage VR ≤ 20 V • Low forward voltage • Low leakage current • Ultra small and .

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PMEG2002AESFB 20 V, 0.2 A low VF MEGA Schottky barrier rectifier 17 August 2017 Product data sheet 1. General description Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an integrated guard ring for stress protection in a DSN0603B-2 (SOD962B) leadless ultra small Surface-Mounted Device (SMD) package. 2. Features and benefits • Average forward current IF(AV) ≤ 0.2 A • Reverse voltage VR ≤ 20 V • Low forward voltage • Low leakage current • Ultra small and leadless SMD package • Package height typ. 0.2 mm 3. Applications • Low voltage rectification • High efficiency DC-to-DC conversion • Switch mode power supply • Low power consumption applications • Ultra high-speed switching • LED backlight for mobile application • Smartcard-embedded applications 4. Quick reference data Table 1. Quick reference data Symbol Parameter IF(AV) average forward current VR reverse voltage VF forward voltage IR reverse current Conditions δ = 0.5 ; f = 20 kHz; Tsp ≤ 125 °C; square wave Tj = 25 °C IF = 200 mA; Tj = 25 °C; pulsed VR = 10 V; Tj = 25 °C; pulsed VR = 20 V; Tj = 25 °C; pulsed [1] Very short pulse, in order to maintain a stable junction temperature. Min Typ Max Unit - - 0.2 A [1] [1] [1] - - 20 V 375 420 mV 5 25 µA 10 45 µA Nexperia PMEG2002AESFB 20 V, 0.2 A low VF MEGA Schottky barrier rectifier 5. Pinning information Table 2. Pinning information Pin Symbol Description 1 K cathode[1] 2 A anode [1] The marking bar indicates the cathode. Simplified outline 12 Transparent top view DSN0603B-2 (SOD962B) Graphic symbol 1 2 sym001 6. Ordering information Table 3. Ordering information Type number Package Name PMEG2002AESFB DSN0603B-2 Description silicon, leadless ultra small package; 2 terminals; 0.4 mm pitch; 0.6 x 0.3 x 0.2 mm body Version SOD962B 7. Marking Table 4. Marking codes Type number PMEG2002AESFB Marking code A PMEG2002AESFB Product data sheet All information provided in this document is subject to legal disclaimers. 17 August 2017 © Nexperia B.V. 2017. All rights reserved 2 / 13 Nexperia PMEG2002AESFB 20 V, 0.2 A low VF MEGA Schottky barrier rectifier 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions VR reverse voltage Tj = 25 °C IF forward current Tsp ≤ 120 °C; δ = 1 IF(AV) average forward current δ = 0.5 ; f = 20 kHz; Tamb ≤ 115 °C; square wave δ = 0.5 ; f = 20 kHz; Tsp ≤ 125 °C; square wave IFRM repetitive peak forward tp ≤ 1 ms; δ ≤ 0.25 current IFSM non-repetitive peak tp = 8 ms; Tj(init) = 25 °C; square wave forward current Ptot total power dissipation Tamb ≤ 25 °C [1] [2] Tj junction temperature Tamb ambient temperature Tstg storage temperature Min Max - 20 - 0.28 - 0.2 - 0.2 - 1.7 -4 - 325 - 525 - 125 -40 125 -40 125 [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for anode and cathode 1 cm2 each. Unit V A A A A A mW mW °C °C °C 9. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Rth(j-a) thermal resistance from junction to ambient Rth(j-sp) thermal resistance from junction to solder point Conditions in free air Min Typ Max Unit [1] [2] - - 310 K/W [1] [3] - - 190 K/W [4] - - 40 K/W [1] For Schottky barrier diodes thermal runaway has to be considered, as in some applications the reverse power losses PR are a significant part of the total power losses. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for anode and cathode 1 cm2 each. [4] Soldering point of anode tab. PMEG2002AESFB Product data sheet All information provided in this document is subject to legal disclaimers. 17 August 2017 © Nexperia B.V. 2017. All rights reserved 3 / 13 Nexperia PMEG2002AESFB 20 V, 0.2 A low VF MEGA Schottky barrier rectifier 103 Zth(j-a) (K/W) 102 duty cycle = 1 0.75 0.50 0.33 0.25 0.20 0.10 0.05 10 0.02 0.01 0 aaa-027244 1 10-5 10-4 10-3 10-2 10-1 FR4 PCB, standard footprint 1 10 102 103 tp (s) Fig. 1. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 103 aaa-027245 Zth(j-a) (K/W) duty cycle = 1 102 0.75 0.33 0.20 0.50 0.25 0.10 10 0.05 0.02 0.01 0 1 10-5 10-4 10-3 10-2 10-1 FR4 PCB, mounting pad for anode and cathode 1 cm2 each 1 10 102 103 tp (s) Fig. 2. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values PMEG2002AESFB Product data sheet All information provided in this document is subject to legal disclaimers. 17 August 2017 © Nexperia B.V. 2017. All rights reserved 4 / 13 Nexperia PMEG2002AESFB 20 V, 0.2 A low VF MEGA Schottky barrier rectifier 10. C.


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