Document
PMEG2002AESFB
20 V, 0.2 A low VF MEGA Schottky barrier rectifier
17 August 2017
Product data sheet
1. General description
Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an integrated guard ring for stress protection in a DSN0603B-2 (SOD962B) leadless ultra small Surface-Mounted Device (SMD) package.
2. Features and benefits
• Average forward current IF(AV) ≤ 0.2 A • Reverse voltage VR ≤ 20 V • Low forward voltage • Low leakage current • Ultra small and leadless SMD package • Package height typ. 0.2 mm
3. Applications
• Low voltage rectification • High efficiency DC-to-DC conversion • Switch mode power supply • Low power consumption applications • Ultra high-speed switching • LED backlight for mobile application • Smartcard-embedded applications
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
IF(AV)
average forward current
VR reverse voltage VF forward voltage IR reverse current
Conditions
δ = 0.5 ; f = 20 kHz; Tsp ≤ 125 °C; square wave
Tj = 25 °C IF = 200 mA; Tj = 25 °C; pulsed VR = 10 V; Tj = 25 °C; pulsed VR = 20 V; Tj = 25 °C; pulsed
[1] Very short pulse, in order to maintain a stable junction temperature.
Min Typ Max Unit - - 0.2 A
[1] [1] [1] -
- 20 V 375 420 mV 5 25 µA 10 45 µA
Nexperia
PMEG2002AESFB
20 V, 0.2 A low VF MEGA Schottky barrier rectifier
5. Pinning information
Table 2. Pinning information Pin Symbol Description 1 K cathode[1] 2 A anode
[1] The marking bar indicates the cathode.
Simplified outline
12
Transparent top view
DSN0603B-2 (SOD962B)
Graphic symbol
1
2
sym001
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
PMEG2002AESFB
DSN0603B-2
Description
silicon, leadless ultra small package; 2 terminals; 0.4 mm pitch; 0.6 x 0.3 x 0.2 mm body
Version SOD962B
7. Marking
Table 4. Marking codes Type number PMEG2002AESFB
Marking code A
PMEG2002AESFB
Product data sheet
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17 August 2017
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PMEG2002AESFB
20 V, 0.2 A low VF MEGA Schottky barrier rectifier
8. Limiting values
Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
VR
reverse voltage
Tj = 25 °C
IF
forward current
Tsp ≤ 120 °C; δ = 1
IF(AV)
average forward current δ = 0.5 ; f = 20 kHz; Tamb ≤ 115 °C; square wave
δ = 0.5 ; f = 20 kHz; Tsp ≤ 125 °C; square wave
IFRM repetitive peak forward tp ≤ 1 ms; δ ≤ 0.25 current
IFSM
non-repetitive peak
tp = 8 ms; Tj(init) = 25 °C; square wave
forward current
Ptot total power dissipation Tamb ≤ 25 °C
[1]
[2]
Tj junction temperature
Tamb
ambient temperature
Tstg storage temperature
Min Max - 20 - 0.28 - 0.2
- 0.2
- 1.7
-4
- 325 - 525 - 125 -40 125 -40 125
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for anode and cathode 1 cm2 each.
Unit V A A
A
A
A
mW mW °C °C °C
9. Thermal characteristics
Table 6. Thermal characteristics
Symbol
Parameter
Rth(j-a)
thermal resistance from junction to ambient
Rth(j-sp)
thermal resistance from junction to solder point
Conditions in free air
Min Typ Max Unit [1] [2] - - 310 K/W [1] [3] - - 190 K/W
[4] - - 40 K/W
[1] For Schottky barrier diodes thermal runaway has to be considered, as in some applications the reverse power losses PR are a significant part of the total power losses.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for anode and cathode 1 cm2 each.
[4] Soldering point of anode tab.
PMEG2002AESFB
Product data sheet
All information provided in this document is subject to legal disclaimers.
17 August 2017
© Nexperia B.V. 2017. All rights reserved
3 / 13
Nexperia
PMEG2002AESFB
20 V, 0.2 A low VF MEGA Schottky barrier rectifier
103
Zth(j-a) (K/W)
102
duty cycle = 1
0.75 0.50
0.33 0.25 0.20
0.10
0.05 10
0.02
0.01 0
aaa-027244
1 10-5
10-4
10-3
10-2
10-1
FR4 PCB, standard footprint
1
10 102 103 tp (s)
Fig. 1. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
103 aaa-027245
Zth(j-a) (K/W) duty cycle = 1
102 0.75
0.33 0.20
0.50 0.25 0.10
10 0.05
0.02
0.01 0
1 10-5
10-4
10-3
10-2
10-1
FR4 PCB, mounting pad for anode and cathode 1 cm2 each
1
10 102 103 tp (s)
Fig. 2. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
PMEG2002AESFB
Product data sheet
All information provided in this document is subject to legal disclaimers.
17 August 2017
© Nexperia B.V. 2017. All rights reserved
4 / 13
Nexperia
PMEG2002AESFB
20 V, 0.2 A low VF MEGA Schottky barrier rectifier
10. C.