PMEG2015EV

DISCRETE SEMICONDUCTORS DATA SHEET M3D744 PMEG2015EV Low VF MEGA Schottky barrier diode Product data sheet Supersedes data of 2003 May 21 2003 Jun 03 NXP Semiconductors Low VF MEGA Schottky barrier diode Product data sheet PMEG2015EV FEATURES Forward current: 1.5 A Reverse voltage: 20 V Very low forward voltage Ultra small plastic SMD package Flat leads: excellent coplanarity and improved thermal behaviour. APPLICATIONS Low voltage rectification High efficiency DC-DC conversion Switch mode power supply Inverse polarity protection Low power consumption applications. PINNING PIN 1 2 3 4 5 6 handbook, halfpag6e 5 4 DESCRIPTION Planar Maximum Efficiency General Application (MEGA) Schottky barrier diode with an integrated guard ring for stress protection, encapsulated in a SOT666 ultra small SMD plastic package. 123 Marking code: F5. DESCRIPTION cathode cathode anode anode cathode cathode 1, 2 5, 6 3, 4 MHC310 Fig.1 Simplified outline (SOT666 and symbol). LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER VR IF IFSM IFRM Tstg Tj Tamb continuous reverse voltage continuous forward current non-repetitive peak forward current repetitive peak forward current storage temperature junction temperature operating ambient temperature CONDITIONS Ts < 55 °C tp = 8 ms square wave; note 1 tp = 1 ms; δ = ≤ 0.25 MIN. − − − − −65 − −65 Note 1. Only valid if pins 3 and 4 are connected in parallel. MAX. 20 1....