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PMEG3010AESA Dataheets PDF



Part Number PMEG3010AESA
Manufacturers nexperia
Logo nexperia
Description MEGA Schottky barrier rectifier
Datasheet PMEG3010AESA DatasheetPMEG3010AESA Datasheet (PDF)

PMEG3010AESA 30 V, 1 A low VF MEGA Schottky barrier rectifier 3 August 2015 Preliminary data sheet 1. General description Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an integrated guard ring for stress protection in a leadless ultra small DSN1006U-2 (SOD995) Surface-Mounted Device (SMD) package. 2. Features and benefits • Average forward current: IF(AV) ≤ 1 A • Reverse voltage: VR ≤ 30 V • Low forward voltage, typical: VF = 415 mV • Low reverse curre.

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PMEG3010AESA 30 V, 1 A low VF MEGA Schottky barrier rectifier 3 August 2015 Preliminary data sheet 1. General description Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an integrated guard ring for stress protection in a leadless ultra small DSN1006U-2 (SOD995) Surface-Mounted Device (SMD) package. 2. Features and benefits • Average forward current: IF(AV) ≤ 1 A • Reverse voltage: VR ≤ 30 V • Low forward voltage, typical: VF = 415 mV • Low reverse current, typical: IR = 300 µA • Package height typ. 270 µm 3. Applications • Low voltage rectification • High efficiency DC-to-DC conversion • Switch mode power supply • Low power consumption applications • Ultra high-speed switching • LED backlight for mobile application 4. Quick reference data Table 1. Symbol IF(AV) VR VF Quick reference data Parameter average forward current reverse voltage forward voltage IR reverse current Conditions δ = 0.5; f = 20 kHz; Tsp ≤ 145 °C; square wave Tj = 25 °C IF = 1 A; tp ≤ 300 µs; δ ≤ 0.02; Tj = 25 °C VR = 20 V; tp ≤ 3 ms; δ ≤ 0.3; Tj = 25 °C VR = 30 V; tp ≤ 3 ms; δ ≤ 0.3; Tj = 25 °C Min Typ Max Unit - - 1A - - 30 V - 415 480 mV - 60 255 µA - 300 1250 µA Nexperia PMEG3010AESA 30 V, 1 A low VF MEGA Schottky barrier rectifier 5. Pinning information Table 2. Pin 1 2 Pinning information Symbol Description K cathode[1] A anode Simplified outline 12 Graphic symbol 1 2 sym001 Transparent top view DSN1006U-2 (SOD995) [1] The marking bar indicates the cathode. 6. Ordering information Table 3. Ordering information Type number Package Name Description Version PMEG3010AESA DSN1006U-2 leadless ultra small package; 2 terminals; body 1.0 x 0.6 SOD995 x 0.27 mm 7. Marking Table 4. Marking codes Type number PMEG3010AESA Marking code 3B PMEG3010AESA Preliminary data sheet All information provided in this document is subject to legal disclaimers. 3 August 2015 © Nexperia B.V. 2017. All rights reserved 2 / 15 Nexperia PMEG3010AESA 30 V, 1 A low VF MEGA Schottky barrier rectifier 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions VR reverse voltage Tj = 25 °C IF forward current Tsp ≤ 140 °C; δ = 1 IF(AV) average forward current δ = 0.5; f = 20 kHz; Tamb ≤ 115 °C; square wave δ = 0.5; f = 20 kHz; Tsp ≤ 145 °C; square wave IFRM repetitive peak forward current tp ≤ 1 ms; δ ≤ 0.25 IFSM non-repetitive peak forward tp = 8 ms; Tj(init) = 25 °C; square wave current Ptot total power dissipation Tamb ≤ 25 °C Tj Tamb Tstg junction temperature ambient temperature storage temperature [1] [2] [3] [1] Min Max Unit - 30 V - 1.4 A - 1A - 1A - 4A - 10 A - 0.69 W - 1.19 W - 1.78 W - 150 °C -55 150 °C -65 150 °C [1] Device mounted on a ceramic Printed-Circuit Board (PCB), Al2O3, standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [3] Device mounted on an FR4 PCB,.


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