Document
PMEG3010AESA
30 V, 1 A low VF MEGA Schottky barrier rectifier
3 August 2015
Preliminary data sheet
1. General description
Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an integrated guard ring for stress protection in a leadless ultra small DSN1006U-2 (SOD995) Surface-Mounted Device (SMD) package.
2. Features and benefits
• Average forward current: IF(AV) ≤ 1 A • Reverse voltage: VR ≤ 30 V • Low forward voltage, typical: VF = 415 mV • Low reverse current, typical: IR = 300 µA • Package height typ. 270 µm
3. Applications
• Low voltage rectification • High efficiency DC-to-DC conversion • Switch mode power supply • Low power consumption applications • Ultra high-speed switching • LED backlight for mobile application
4. Quick reference data
Table 1. Symbol IF(AV)
VR VF
Quick reference data Parameter average forward current
reverse voltage
forward voltage
IR reverse current
Conditions δ = 0.5; f = 20 kHz; Tsp ≤ 145 °C; square wave Tj = 25 °C
IF = 1 A; tp ≤ 300 µs; δ ≤ 0.02; Tj = 25 °C
VR = 20 V; tp ≤ 3 ms; δ ≤ 0.3; Tj = 25 °C
VR = 30 V; tp ≤ 3 ms; δ ≤ 0.3; Tj = 25 °C
Min Typ Max Unit - - 1A
- - 30 V - 415 480 mV
- 60 255 µA - 300 1250 µA
Nexperia
PMEG3010AESA
30 V, 1 A low VF MEGA Schottky barrier rectifier
5. Pinning information
Table 2. Pin 1 2
Pinning information Symbol Description K cathode[1] A anode
Simplified outline
12
Graphic symbol
1
2
sym001
Transparent top view
DSN1006U-2 (SOD995)
[1] The marking bar indicates the cathode.
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
Description
Version
PMEG3010AESA
DSN1006U-2 leadless ultra small package; 2 terminals; body 1.0 x 0.6 SOD995 x 0.27 mm
7. Marking
Table 4. Marking codes Type number PMEG3010AESA
Marking code 3B
PMEG3010AESA
Preliminary data sheet
All information provided in this document is subject to legal disclaimers.
3 August 2015
© Nexperia B.V. 2017. All rights reserved
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Nexperia
PMEG3010AESA
30 V, 1 A low VF MEGA Schottky barrier rectifier
8. Limiting values
Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
VR reverse voltage
Tj = 25 °C
IF forward current
Tsp ≤ 140 °C; δ = 1
IF(AV)
average forward current
δ = 0.5; f = 20 kHz; Tamb ≤ 115 °C; square wave
δ = 0.5; f = 20 kHz; Tsp ≤ 145 °C; square wave
IFRM repetitive peak forward current tp ≤ 1 ms; δ ≤ 0.25
IFSM
non-repetitive peak forward
tp = 8 ms; Tj(init) = 25 °C; square wave
current
Ptot
total power dissipation
Tamb ≤ 25 °C
Tj Tamb Tstg
junction temperature ambient temperature storage temperature
[1]
[2] [3] [1]
Min Max Unit - 30 V - 1.4 A - 1A
- 1A
- 4A - 10 A
- 0.69 W - 1.19 W - 1.78 W - 150 °C -55 150 °C -65 150 °C
[1] Device mounted on a ceramic Printed-Circuit Board (PCB), Al2O3, standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [3] Device mounted on an FR4 PCB,.