SSM6J507NU

MOSFETs Silicon P-Channel MOS (U-MOS) SSM6J507NU 1. Applications Power Management Switches 2. Features (1) 4 V gate drive voltage. (2) Low drain-source on-resistance : RDS(ON) = 20 mΩ (max) (@VGS = -10 V) RDS(ON) = 28 mΩ (max) (@VGS = -4.5 V) RDS(ON) = 32 mΩ (max) (@VGS = -4.0 V) 3. Packaging and Pin Assignment UDFN6B SSM6J507NU 1.2.5.6 Drain 3. Gate 4. Source ©2015 Toshiba Corporation 1 Start of commercial production 2015-05 2015-11-10 Rev.2.0 SSM6J507NU 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 ) Characteristics Symbol Rating Unit Drain-source voltage VDSS -30 V Gate-source voltage VGSS -25 / +20 Drain current (DC) (Note 1) ID -10 A Drain current (pulsed) (Note 1), (Note 2) IDP -30 Power dissipation (Note 3) PD 1.25 W Power dissipation (t ≤ 10 s) (Note 3) PD 2.5 W Channel temperature Tch 150  Storage temperature Tstg -55 to 150 Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure...