Document
PMEG3020BEP
2 A low VF MEGA Schottky barrier rectifier
9 February 2018
Product data sheet
1. General description
Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an integrated guard ring for stress protection, encapsulated in a SOD128 small and flat lead SurfaceMounted Device (SMD) plastic package.
2. Features and benefits
• Average forward current: IF(AV) ≤ 2 A • Reverse voltage: VR ≤ 30 V • Low forward voltage • High power capability due to clip-bond technology • AEC-Q101 qualified • Small and flat lead SMD plastic package • Capable for reflow and wave soldering
3. Applications
• Low voltage rectification • High efficiency DC-to-DC conversion • Switch Mode Power Supply (SMPS) • Reverse polarity protection • Low power consumption applications
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
IF(AV)
average forward current
VR reverse voltage VF forward voltage IR reverse current
Conditions
δ = 0.5 ; f = 20 kHz; Tamb ≤ 100 °C; square wave
δ = 0.5 ; f = 20 kHz; Tsp ≤ 140 °C; square wave
Tj = 25 °C
IF = 2 A; Tj = 25 °C
VR = 30 V; Tj = 25 °C
[1] Device mounted on a ceramic PCB, Al2O3, standard footprint.
[1]
Min Typ Max Unit - - 2A
- - 2A
- - 30 V - 400 450 mV - 35 100 µA
Nexperia
PMEG3020BEP
2 A low VF MEGA Schottky barrier rectifier
5. Pinning information
Table 2. Pinning information Pin Symbol Description 1 K cathode[1] 2 A anode
[1] The marking bar indicates the cathode.
Simplified outline
12
CFP5 (SOD128)
Graphic symbol
KA sym001
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
PMEG3020BEP
CFP5
Description
plastic, surface mounted package; 2 terminals; 4 mm pitch; 3.8 mm x 2.6 mm x 1 mm body
Version SOD128
7. Marking
Table 4. Marking codes Type number PMEG3020BEP
Marking code A4
PMEG3020BEP
Product data sheet
All information provided in this document is subject to legal disclaimers.
9 February 2018
© Nexperia B.V. 2018. All rights reserved
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Nexperia
PMEG3020BEP
2 A low VF MEGA Schottky barrier rectifier
8. Limiting values
Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
VR
reverse voltage
Tj = 25 °C
IF(AV)
average forward current δ = 0.5 ; f = 20 kHz; Tamb ≤ 100 °C; square wave
[1]
δ = 0.5 ; f = 20 kHz; Tsp ≤ 140 °C; square wave
IFSM
non-repetitive peak
tp = 8 ms; square wave; Tj(init) = 25 °C
forward current
Ptot total power dissipation Tamb ≤ 25 °C
[2]
[3]
[1]
Tj junction temperature
Tamb
ambient temperature
Tstg storage temperature
[1] Device mounted on a ceramic PCB, Al2O3, standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2.
Min Max Unit - 30 V - 2A
- 2A
- 50 A
- 625 mW - 1.05 W - 2.1 W - 150 °C -55 150 °C -65 150 °C
9. Thermal characteristics
Table 6. Thermal characteristics
Symbol
Parameter
Rth(j-a)
thermal resistance from junction to ambient
Conditions in free air
Rth(j-sp)
thermal resistance from junction to solder point
Min Typ Max Unit [1] [2] - - 200 K/W [3] [2] - - 120 K/W [4] [2] - - 60 K/W [5] - - 12 K/W
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] For Schottky barrier diodes thermal runaway has to be considered, as in some applications the reverse power losses PR are a significant part of the total power losses.
[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2.
[4] Device mounted on a ceramic PCB, Al2O3, standard footprint. [5] Soldering point of cathode tab.
PMEG3020BEP
Product data sheet
All information provided in this document is subject to legal disclaimers.
9 February 2018
© Nexperia B.V. 2018. All rights reserved
3 / 13
Nexperia
PMEG3020BEP
2 A low VF MEGA Schottky barrier rectifier
103 Zth(j-a) (K/W)
102
10
duty cycle =
1 0.5 0.25
0.75 0.33 0.2
0.1
0.05
0.02
0.01
1 0
006aab778
10- 1 10- 3
10- 2
FR4 PCB, standard footprint
10- 1
1
10 102 103 tp (s)
Fig. 1. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
103 006aab779
Zth(j-a) (K/W)
duty cycle =
102
1 0.75
0.5 0.25
0.33 0.2
10 0.1 0.05
0.02 0.01
1 0
10- 1 10- 3
10- 2
10- 1
FR4 PCB, mounting pad for cathode 1 cm2
1
10 102 103 tp (s)
Fig. 2. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
PMEG3020BEP
Product data sheet
All information provided in this document is subject to legal disclaimers.
9 February 2018
© Nexperia B.V. 2018. All rights reserved
4 / 13
Nexperia
102
Zth(j-a) (K/W)
10
duty cycle =
1 0.5 0.25
0.75
0.33 0.2
0.1 0.05
0.02 0.01 1
0
PMEG3020BEP
2 A low VF MEGA Schottky barrier rectifier
006aab780
10- 1 10- 3
10- 2
10- 1
1
10 .