BAS116QA

BAS116QA Low-leakage diode 3 May 2016 Product data sheet 1. General description Single low-leakage current switching diode encapsulated in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. 2. Features and benefits High switching speed: trr = 0.8 µs Low leakage current: IR = 3 pA Repetitive peak reverse voltage VRRM ≤ 85 V Low capacitance Cd = 2 pF Ultra small SMD plastic package Low package height of 0.37 mm Suitable for Automatic Optical Inspection (AOI) of solder joint AEC-Q101 qualified 3. Applications Low-leakage current applications General-purpose switching 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions VRRM repetitive peak reverse Tj = 25 °C voltage IF forward current Tamb = 25 °C [1] VR reverse voltage Tj = 25 °C VF forward voltage IF = 150 mA; Tj = 25 °C IR reverse current VR = 75 V; Tj = 25 °C trr reverse recovery time IF = 10 mA; IR = 10 mA; IR(meas) = 1 mA; RL = 100 Ω; Tamb = 25 °C Min Typ Max - - 85 - - 300 - - 75 - - 1.25 - 0.003 5 - 0.8 3 [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. Unit V mA V V nA µs Nexperia BAS116QA Low-leakage diode 5. Pinning information Table 2. Pinning information Pin Symbol Description 1 A anode 2 n.c. not connected 3 K cathode 4 K cathode Simplified outline Graphic symbol 1 43 2 Transparent top view DFN...