diode. BAV170M Datasheet

BAV170M Datasheet PDF


Part

BAV170M

Description

Dual common cathode low-leakage diode

Manufacture

nexperia

Page 11 Pages
Datasheet
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BAV170M Datasheet
BAV170M
Dual common cathode low-leakage diode
19 May 2016
Product data sheet
1. General description
Dual common cathode low-leakage diode encapsulated in a leadless ultra small DFN1006-3
(SOT883) Surface-Mounted Device (SMD) plastic package.
2. Features and benefits
High switching speed: trr = 0.8 µs
Low leakage current: IR = 3 pA
Repetitive peak reverse voltage VRRM ≤ 85 V
Low capacitance Cd = 2 pF
Ultra small SMD plastic package
Low package height of 0.48 mm
AEC-Q101 qualified
3. Applications
Low-leakage current applications
General-purpose switching
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Per diode
IF forward current
IR reverse current
VR reverse voltage
trr reverse recovery time
Conditions
Tamb = 25 °C; single diode loaded
[1]
VR = 75 V; Tj = 25 °C
Tj = 25 °C
IF = 10 mA; IR = 10 mA; IR(meas) = 1 mA;
RL = 100 Ω; Tamb = 25 °C
Min Typ Max
- - 320
- 0.003 5
- - 75
- 0.8 3
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.
Unit
mA
nA
V
µs

BAV170M Datasheet
Nexperia
BAV170M
Dual common cathode low-leakage diode
5. Pinning information
Table 2. Pinning information
Pin Symbol Description
1 A1 anode (diode 1)
2 A2 anode (diode 2)
3 CC common cathode
Simplified outline
1
3
2
Transparent
top view
DFN1006-3 (SOT883)
Graphic symbol
3
12
006aab034
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
BAV170M
DFN1006-3
Description
Version
DFN1006-3: leadless ultra small plastic package; 3 solder lands SOT883
7. Marking
Table 4. Marking codes
Type number
BAV170M
Marking code
M7
BAV170M
Product data sheet
All information provided in this document is subject to legal disclaimers.
19 May 2016
© Nexperia B.V. 2017. All rights reserved
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Features Datasheet pdf BAV170M Dual common cathode low-leakage diode 19 May 2016 Product data sheet 1. General description Dual common cath ode low-leakage diode encapsulated in a leadless ultra small DFN1006-3 (SOT883 ) Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • High switching speed: trr = 0.8 µs • Low leakage current: IR = 3 pA • Rep etitive peak reverse voltage VRRM ≤ 8 5 V • Low capacitance Cd = 2 pF • U ltra small SMD plastic package • Low package height of 0.48 mm • AEC-Q101 qualified 3. Applications • Low-leak age current applications • General-pu rpose switching 4. Quick reference dat a Table 1. Quick reference data Symbo l Parameter Per diode IF forward cur rent IR reverse current VR reverse vo ltage trr reverse recovery time Condi tions Tamb = 25 °C; single diode load ed [1] VR = 75 V; Tj = 25 °C Tj = 2 5 °C IF = 10 mA; IR = 10 mA; IR(meas) = 1 mA; RL = 100 Ω; Tamb = 25 °C Mi n Typ Max - - 320 - 0.003 5 - - 75 - 0.8 3 [1] Device mounted on an FR4 Printed-Circuit .
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