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BAS21AVD Datasheet PDF

Part Number BAS21AVD
Description High-voltage switching diodes
Manufacture nexperia
Total Page 11 Pages
PDF Download Download BAS21AVD Datasheet PDF

Features: Datasheet pdf BAS21AVD High-voltage switching diodes 1 August 2013 Product data sheet 1. Ge neral description Triple high-voltage s witching diodes, encapsulated in a SOT4 57 (SC-74/TSOP6) small Surface-Mounted Device (SMD) plastic package. 2. Featu res and benefits • High switching spe ed: trr ≤ 50 ns • Reverse voltage: VR ≤ 200 V • Repetitive peak revers e voltage: VRRM ≤ 250 V • Small SMD plastic package • Low capacitance: C d ≤ 5 pF • AEC-Q101 qualified • R epetitive peak forward current: IFRM 1 A 3. Applications • High-voltage switching in surface-mounted circuits • Automotive • Communication 4. Qu ick reference data Table 1. Quick refe rence data Symbol Parameter Conditio ns Per diode IF forward current pul sed; tp ≤ 300 µs; δ ≤ 0.02 [1] VR reverse voltage Per diode IR reve rse current VR = 200 V; Tamb = 25 °C; pulsed; tp ≤ 300 µs; δ ≤ 0.02 trr reverse recovery time IF = 30 mA; I R = 30 mA; IR(meas) = 3 mA; RL = 100 Ω; Tamb = 25 °C Min Typ Max Unit - - 200 mA - - 200 V - 25 100 nA - .

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BAS21AVD datasheet
BAS21AVD
High-voltage switching diodes
1 August 2013
Product data sheet
1. General description
Triple high-voltage switching diodes, encapsulated in a SOT457 (SC-74/TSOP6) small
Surface-Mounted Device (SMD) plastic package.
2. Features and benefits
High switching speed: trr ≤ 50 ns
Reverse voltage: VR ≤ 200 V
Repetitive peak reverse voltage: VRRM ≤ 250 V
Small SMD plastic package
Low capacitance: Cd ≤ 5 pF
AEC-Q101 qualified
Repetitive peak forward current: IFRM ≤ 1 A
3. Applications
High-voltage switching in surface-mounted circuits
Automotive
Communication
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
Per diode
IF
forward current
pulsed; tp ≤ 300 µs; δ ≤ 0.02
[1]
VR reverse voltage
Per diode
IR
reverse current
VR = 200 V; Tamb = 25 °C; pulsed;
tp ≤ 300 µs; δ ≤ 0.02
trr reverse recovery time IF = 30 mA; IR = 30 mA; IR(meas) = 3 mA;
RL = 100 Ω; Tamb = 25 °C
Min Typ Max Unit
- - 200 mA
- - 200 V
- 25 100 nA
- 16 50 ns
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.

BAS21AVD datasheet
Nexperia
BAS21AVD
High-voltage switching diodes
5. Pinning information
Table 2. Pinning information
Pin Symbol Description
1 A1 anode (diode 1)
2 A2 anode (diode 2)
3 A3 anode (diode 3)
4 K3 cathode (diode 3)
5 K2 cathode (diode 2)
6 K1 cathode (diode 1)
Simplified outline
654
Graphic symbol
65
4
123
TSOP6 (SOT457)
123
006aab106
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
BAS21AVD
TSOP6
Description
plastic surface-mounted package (TSOP6); 6 leads
Version
SOT457
7. Marking
Table 4. Marking codes
Type number
BAS21AVD
Marking code
E6
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Per diode
VRRM
repetitive peak reverse voltage
VR reverse voltage
IF forward current
pulsed; tp ≤ 300 µs; δ ≤ 0.02
[1]
IFRM repetitive peak forward current tp ≤ 1 ms; δ ≤ 25 %
IFSM
non-repetitive peak forward
tp = 10 µs; Tj(init) = 25 °C; square wave
current
tp = 100 µs; Tj(init) = 25 °C; square wave
tp = 10 ms; Tj(init) = 25 °C; square wave
Min Max Unit
- 250 V
- 200 V
- 200 mA
- 1A
- 16 A
- 8A
- 2A
BAS21AVD
Product data sheet
All information provided in this document is subject to legal disclaimers.
1 August 2013
© Nexperia B.V. 2017. All rights reserved
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