diodes. BAS21VD Datasheet

BAS21VD Datasheet PDF


Part

BAS21VD

Description

High-voltage switching diodes

Manufacture

nexperia

Page 11 Pages
Datasheet
Download BAS21VD Datasheet


BAS21VD Datasheet
BAS21VD
High-voltage switching diodes
1 August 2013
Product data sheet
1. General description
Triple high-voltage switching diodes, encapsulated in a SOT457 (SC-74/TSOP6) small
Surface-Mounted Device (SMD) plastic package.
2. Features and benefits
High switching speed: trr ≤ 50 ns
Low capacitance: Cd ≤ 5 pF
Reverse voltage: VR ≤ 200 V
AEC-Q101 qualified
Repetitive peak reverse voltage: VRRM ≤ 250 V
Repetitive peak forward current: IFRM ≤ 1 A
Small SMD plastic package
3. Applications
High-voltage switching in surface-mounted circuits
Automotive
Communication
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
Per diode
IF
forward current
pulsed; tp ≤ 300 µs; δ ≤ 0.02
[1]
VR reverse voltage
Per diode
IR
reverse current
VR = 200 V; Tamb = 25 °C; pulsed;
tp ≤ 300 µs; δ ≤ 0.02
trr reverse recovery time IF = 30 mA; IR = 30 mA; IR(meas) = 3 mA;
RL = 100 Ω; Tamb = 25 °C
Min Typ Max Unit
- - 200 mA
- - 200 V
- 25 100 nA
- 16 50 ns
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.

BAS21VD Datasheet
Nexperia
BAS21VD
High-voltage switching diodes
5. Pinning information
Table 2. Pinning information
Pin Symbol Description
1 K1 cathode (diode 1)
2 K2 cathode (diode 2)
3 K3 cathode (diode 3)
4 A3 anode (diode 3)
5 A2 anode (diode 2)
6 A1 anode (diode 1)
Simplified outline
654
Graphic symbol
65
4
123
TSOP6 (SOT457)
123
006aab241
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
BAS21VD
TSOP6
Description
plastic surface-mounted package (TSOP6); 6 leads
Version
SOT457
7. Marking
Table 4. Marking codes
Type number
BAS21VD
Marking code
B5
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Per diode
VRRM
repetitive peak reverse voltage
VR reverse voltage
IF forward current
pulsed; tp ≤ 300 µs; δ ≤ 0.02
[1]
IFRM repetitive peak forward current tp ≤ 1 ms; δ ≤ 25 %
IFSM
non-repetitive peak forward
tp = 10 µs; Tj(init) = 25 °C; square wave
current
tp = 100 µs; Tj(init) = 25 °C; square wave
tp = 10 ms; Tj(init) = 25 °C; square wave
Min Max Unit
- 250 V
- 200 V
- 200 mA
- 1A
- 16 A
- 8A
- 2A
BAS21VD
Product data sheet
All information provided in this document is subject to legal disclaimers.
1 August 2013
© Nexperia B.V. 2017. All rights reserved
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Features Datasheet pdf BAS21VD High-voltage switching diodes 1 August 2013 Product data sheet 1. Gen eral description Triple high-voltage sw itching diodes, encapsulated in a SOT45 7 (SC-74/TSOP6) small Surface-Mounted D evice (SMD) plastic package. 2. Featur es and benefits • High switching spee d: trr ≤ 50 ns • Low capacitance: C d ≤ 5 pF • Reverse voltage: VR ≤ 200 V • AEC-Q101 qualified • Repeti tive peak reverse voltage: VRRM ≤ 250 V • Repetitive peak forward current: IFRM ≤ 1 A • Small SMD plastic pac kage 3. Applications • High-voltage switching in surface-mounted circuits Automotive • Communication 4. Qui ck reference data Table 1. Quick refer ence data Symbol Parameter Condition s Per diode IF forward current puls ed; tp ≤ 300 µs; δ ≤ 0.02 [1] V R reverse voltage Per diode IR rever se current VR = 200 V; Tamb = 25 °C; pulsed; tp ≤ 300 µs; δ ≤ 0.02 t rr reverse recovery time IF = 30 mA; IR = 30 mA; IR(meas) = 3 mA; RL = 100 Ω; Tamb = 25 °C Min Typ Max Unit - - 200 mA - - 200 V - 25 100 nA - 1.
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