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BAS321J

nexperia

High-voltage switching diode

BAS321J High-voltage switching diode 23 March 2018 Product data sheet 1. General description High-voltage switching di...


nexperia

BAS321J

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Description
BAS321J High-voltage switching diode 23 March 2018 Product data sheet 1. General description High-voltage switching diode in a very small SOD323F (SC-90) flat lead Surface-Mounted Device (SMD) plastic package. 2. Features and benefits High switching speed: trr ≤ 50 ns Low leakage current: IR ≤ 100 nA High reverse voltage VR ≤ 200 V Low capacitance: Cd ≤ 2 pF Very small SMD plastic package AEC-Q101 qualified 3. Applications High-speed switching General-purpose switching Voltage clamping Reverse polarity protection 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ IF VR VRRM forward current reverse voltage repetitive peak reverse voltage [1] - - VF forward voltage IF = 200 mA; tp ≤ 300 µs; δ ≤ 0.02; -- Tj = 25 °C IR reverse current VR = 200 V; pulsed; Tj = 25 °C -- trr reverse recovery time IF = 30 mA; IR = 30 mA; RL = 100 Ω; -- IR(meas) = 3 mA; Tj = 25 °C [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. Max Unit 250 mA 200 V 250 V 1.25 V 100 nA 50 ns Nexperia BAS321J High-voltage switching diode 5. Pinning information Table 2. Pinning information Pin Symbol Description 1 K Cathode 2 A Anode Simplified outline 12 SC-90 (SOD323F) Graphic symbol KA aaa-028035 6. Ordering information Table 3. Ordering information Type number Package Name BAS321J SC-90 Description Version plastic, surface-mounted package; 2 leads; 1...




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