diode. BAS321J Datasheet

BAS321J Datasheet PDF


Part

BAS321J

Description

High-voltage switching diode

Manufacture

nexperia

Page 12 Pages
Datasheet
Download BAS321J Datasheet


BAS321J Datasheet
BAS321J
High-voltage switching diode
23 March 2018
Product data sheet
1. General description
High-voltage switching diode in a very small SOD323F (SC-90) flat lead Surface-Mounted Device
(SMD) plastic package.
2. Features and benefits
High switching speed: trr ≤ 50 ns
Low leakage current: IR ≤ 100 nA
High reverse voltage VR ≤ 200 V
Low capacitance: Cd ≤ 2 pF
Very small SMD plastic package
AEC-Q101 qualified
3. Applications
High-speed switching
General-purpose switching
Voltage clamping
Reverse polarity protection
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
Min Typ
IF
VR
VRRM
forward current
reverse voltage
repetitive peak reverse
voltage
[1] -
-
-
-
-
-
VF
forward voltage
IF = 200 mA; tp ≤ 300 µs; δ ≤ 0.02;
--
Tj = 25 °C
IR
reverse current
VR = 200 V; pulsed; Tj = 25 °C
--
trr
reverse recovery time IF = 30 mA; IR = 30 mA; RL = 100 Ω;
--
IR(meas) = 3 mA; Tj = 25 °C
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.
Max Unit
250 mA
200 V
250 V
1.25 V
100 nA
50 ns

BAS321J Datasheet
Nexperia
BAS321J
High-voltage switching diode
5. Pinning information
Table 2. Pinning information
Pin Symbol Description
1 K Cathode
2 A Anode
Simplified outline
12
SC-90 (SOD323F)
Graphic symbol
KA
aaa-028035
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
BAS321J
SC-90
Description
Version
plastic, surface-mounted package; 2 leads; 1.7 mm x 1.25 mm x SOD323F
0.7 mm body
7. Marking
Table 4. Marking codes
Type number
BAS321J
Marking code
ED
BAS321J
Product data sheet
All information provided in this document is subject to legal disclaimers.
23 March 2018
© Nexperia B.V. 2018. All rights reserved
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Features Datasheet pdf BAS321J High-voltage switching diode 23 March 2018 Product data sheet 1. Gene ral description High-voltage switching diode in a very small SOD323F (SC-90) f lat lead Surface-Mounted Device (SMD) p lastic package. 2. Features and benefi ts • High switching speed: trr ≤ 50 ns • Low leakage current: IR ≤ 100 nA • High reverse voltage VR ≤ 200 V • Low capacitance: Cd ≤ 2 pF • Very small SMD plastic package • AEC -Q101 qualified 3. Applications • Hi gh-speed switching • General-purpose switching • Voltage clamping • Reve rse polarity protection 4. Quick refer ence data Table 1. Quick reference dat a Symbol Parameter Conditions Min T yp IF VR VRRM forward current reverse voltage repetitive peak reverse voltag e [1] - - VF forward voltage IF = 200 mA; tp ≤ 300 µs; δ ≤ 0.02; - - Tj = 25 °C IR reverse current VR = 200 V; pulsed; Tj = 25 °C -- trr reverse recovery time IF = 30 mA; IR = 30 mA; RL = 100 Ω; -- IR(meas) = 3 mA; Tj = 25 °C [1] Device mounted on an FR4 Printed-Circuit .
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