High-voltage switching diode
BAS321J
High-voltage switching diode
23 March 2018
Product data sheet
1. General description
High-voltage switching di...
Description
BAS321J
High-voltage switching diode
23 March 2018
Product data sheet
1. General description
High-voltage switching diode in a very small SOD323F (SC-90) flat lead Surface-Mounted Device (SMD) plastic package.
2. Features and benefits
High switching speed: trr ≤ 50 ns Low leakage current: IR ≤ 100 nA High reverse voltage VR ≤ 200 V Low capacitance: Cd ≤ 2 pF Very small SMD plastic package AEC-Q101 qualified
3. Applications
High-speed switching General-purpose switching Voltage clamping Reverse polarity protection
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
Min Typ
IF VR VRRM
forward current
reverse voltage
repetitive peak reverse voltage
[1] -
-
VF
forward voltage
IF = 200 mA; tp ≤ 300 µs; δ ≤ 0.02;
--
Tj = 25 °C
IR
reverse current
VR = 200 V; pulsed; Tj = 25 °C
--
trr
reverse recovery time IF = 30 mA; IR = 30 mA; RL = 100 Ω;
--
IR(meas) = 3 mA; Tj = 25 °C
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.
Max Unit 250 mA 200 V 250 V
1.25 V
100 nA 50 ns
Nexperia
BAS321J
High-voltage switching diode
5. Pinning information
Table 2. Pinning information Pin Symbol Description 1 K Cathode 2 A Anode
Simplified outline
12
SC-90 (SOD323F)
Graphic symbol
KA aaa-028035
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
BAS321J
SC-90
Description
Version
plastic, surface-mounted package; 2 leads; 1...
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