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BAS32L

nexperia

High-speed switching diode

BAS32L High-speed switching diode Rev. 7 — 20 January 2011 Product data sheet 1. Product profile 1.1 General descript...


nexperia

BAS32L

File Download Download BAS32L Datasheet


Description
BAS32L High-speed switching diode Rev. 7 — 20 January 2011 Product data sheet 1. Product profile 1.1 General description Single high-speed switching diode, fabricated in planar technology, and encapsulated in a small hermetically sealed glass SOD80C Surface-Mounted Device (SMD) package. 1.2 Features and benefits „ High switching speed: trr ≤ 4 ns „ Reverse voltage: VR ≤ 75 V „ Repetitive peak reverse voltage: VRRM ≤ 100 V „ Repetitive peak forward current: IFRM ≤ 450 mA „ Small hermetically sealed glass SMD package 1.3 Applications „ High-speed switching „ Reverse polarity protection 1.4 Quick reference data Table 1. Symbol IF IFRM VR VF trr Quick reference data Parameter forward current repetitive peak forward current reverse voltage forward voltage reverse recovery time Conditions IF = 100 mA Min Typ Max Unit [1] - - 200 mA - - 450 mA - - 75 V - - 1000 mV [2] - - 4 ns [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. [2] When switched from IF = 10 mA to IR = 10 mA; RL = 100 Ω; measured at IR = 1 mA. Nexperia BAS32L High-speed switching diode 2. Pinning information Table 2. Pin 1 2 Pinning Description cathode anode [1] The marking band indicates the cathode. 3. Ordering information Simplified outline [1] ka Graphic symbol 12 006aab040 Table 3. Ordering information Type number Package Name Description BAS32L - hermetically sealed glass surface-mounted package; 2 connectors Version SOD80...




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