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BAS32L Datasheet PDF

Part Number BAS32L
Description High-speed switching diode
Manufacture nexperia
Total Page 11 Pages
PDF Download Download BAS32L Datasheet PDF

Features: Datasheet pdf BAS32L High-speed switching diode Rev. 7 — 20 January 2011 Product data shee t 1. Product profile 1.1 General desc ription Single high-speed switching dio de, fabricated in planar technology, an d encapsulated in a small hermetically sealed glass SOD80C Surface-Mounted Dev ice (SMD) package. 1.2 Features and be nefits „ High switching speed: trr ≤ 4 ns „ Reverse voltage: VR ≤ 75 V Repetitive peak reverse voltage: VRRM ≤ 100 V „ Repetitive peak forward c urrent: IFRM ≤ 450 mA „ Small hermet ically sealed glass SMD package 1.3 Ap plications „ High-speed switching „ R everse polarity protection 1.4 Quick r eference data Table 1. Symbol IF IFRM VR VF trr Quick reference data Paramet er forward current repetitive peak forw ard current reverse voltage forward vol tage reverse recovery time Conditions IF = 100 mA Min Typ Max Unit [1] - - 2 00 mA - - 450 mA - - 75 V - - 1000 mV [ 2] - - 4 ns [1] Device mounted on an F R4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard foo.

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BAS32L datasheet
BAS32L
High-speed switching diode
Rev. 7 — 20 January 2011
Product data sheet
1. Product profile
1.1 General description
Single high-speed switching diode, fabricated in planar technology, and encapsulated in a
small hermetically sealed glass SOD80C Surface-Mounted Device (SMD) package.
1.2 Features and benefits
„ High switching speed: trr 4 ns
„ Reverse voltage: VR 75 V
„ Repetitive peak reverse voltage: VRRM 100 V
„ Repetitive peak forward current: IFRM 450 mA
„ Small hermetically sealed glass SMD package
1.3 Applications
„ High-speed switching
„ Reverse polarity protection
1.4 Quick reference data
Table 1.
Symbol
IF
IFRM
VR
VF
trr
Quick reference data
Parameter
forward current
repetitive peak forward
current
reverse voltage
forward voltage
reverse recovery time
Conditions
IF = 100 mA
Min Typ Max Unit
[1] - - 200 mA
- - 450 mA
- - 75 V
- - 1000 mV
[2] - - 4 ns
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[2] When switched from IF = 10 mA to IR = 10 mA; RL = 100 Ω; measured at IR = 1 mA.

BAS32L datasheet
Nexperia
BAS32L
High-speed switching diode
2. Pinning information
Table 2.
Pin
1
2
Pinning
Description
cathode
anode
[1] The marking band indicates the cathode.
3. Ordering information
Simplified outline
[1]
ka
Graphic symbol
12
006aab040
Table 3. Ordering information
Type number Package
Name
Description
BAS32L
-
hermetically sealed glass surface-mounted package;
2 connectors
Version
SOD80C
4. Marking
Table 4. Marking codes
Type number
BAS32L
Marking code
marking band
5. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
VRRM
repetitive peak reverse
voltage
-
VR reverse voltage
IF forward current
IFRM
repetitive peak forward
current
-
[1] -
-
IFSM
non-repetitive peak forward square wave
[2]
current
tp = 1 μs
-
tp = 1 ms
-
tp = 1 s
-
Max Unit
100 V
75 V
200 mA
450 mA
4A
1A
0.5 A
BAS32L
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 7 — 20 January 2011
© Nexperia B.V. 2017. All rights reserved
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