High-speed switching diode
BAS32L
High-speed switching diode
Rev. 7 — 20 January 2011
Product data sheet
1. Product profile
1.1 General descript...
Description
BAS32L
High-speed switching diode
Rev. 7 — 20 January 2011
Product data sheet
1. Product profile
1.1 General description
Single high-speed switching diode, fabricated in planar technology, and encapsulated in a small hermetically sealed glass SOD80C Surface-Mounted Device (SMD) package.
1.2 Features and benefits
High switching speed: trr ≤ 4 ns Reverse voltage: VR ≤ 75 V Repetitive peak reverse voltage: VRRM ≤ 100 V Repetitive peak forward current: IFRM ≤ 450 mA Small hermetically sealed glass SMD package
1.3 Applications
High-speed switching Reverse polarity protection
1.4 Quick reference data
Table 1. Symbol IF IFRM
VR VF trr
Quick reference data Parameter forward current repetitive peak forward current reverse voltage forward voltage reverse recovery time
Conditions IF = 100 mA
Min Typ Max Unit [1] - - 200 mA
- - 450 mA
- - 75 V - - 1000 mV [2] - - 4 ns
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.
[2] When switched from IF = 10 mA to IR = 10 mA; RL = 100 Ω; measured at IR = 1 mA.
Nexperia
BAS32L
High-speed switching diode
2. Pinning information
Table 2. Pin 1 2
Pinning Description cathode anode
[1] The marking band indicates the cathode.
3. Ordering information
Simplified outline
[1]
ka
Graphic symbol
12 006aab040
Table 3. Ordering information
Type number Package
Name
Description
BAS32L
-
hermetically sealed glass surface-mounted package; 2 connectors
Version SOD80...
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