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BAV756S

nexperia

High-speed switching diodes

BAV756S High-speed switching diode 28 October 2022 Product data sheet 1. General description High-speed switching diod...


nexperia

BAV756S

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Description
BAV756S High-speed switching diode 28 October 2022 Product data sheet 1. General description High-speed switching diode, encapsulated in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package. 2. Features and benefits High switching speed: trr ≤ 4 ns Low capacitance: Cd ≤ 2 pF Low leakage current Reverse voltage: VR ≤ 90 V Very small SMD plastic packages AEC-Q101 qualified 3. Applications High-speed switching General-purpose switching 4. Quick reference data Table 1. Quick reference data Symbol Parameter Per diode IR reverse current VR reverse voltage trr reverse recovery time Conditions VR = 80 V; Tamb = 25 °C IF = 10 mA; IR = 10 mA; RL = 100 Ω; IR(meas) = 1 mA; Tamb = 25 °C Min Typ Max Unit - - 0.5 µA - - 90 V - - 4 ns 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline 1 A1 anode (diode 1) 2 K2 cathode (diode 2) 3 A2; A3 common anode (diode 2 and diode 3) 654 4 K3 cathode (diode 3) 5 A4 anode (diode 4) 123 6 K1; K4 common cathode (diode 1 TSSOP6 (SOT363) and diode 4) Graphic symbol K1; K4 A4 K3 A1 K2 A2; A3 006aab103 Nexperia BAV756S High-speed switching diode 6. Ordering information Table 3. Ordering information Type number Package Name BAV756S TSSOP6 Description Version plastic, surface-mounted package; 6 leads; 0.65 mm pitch; SOT363 2.1 mm x 1.25 mm x 0.95 mm body 7. Marking Table 4. Marking codes Type number BAV756S [1] % = p...




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