PHP18NQ11T

PHP18NQ11T N-channel TrenchMOS standard level FET Rev. 02 — 10 March 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features and benefits „ Higher operating power due to low thermal resistance „ Suitable for high frequency applications due to fast switching characteristics 1.3 Applications „ Class-D audio amplifiers „ DC-to-DC convertors „ Inverters „ Switched-mode power supplies 1.4 Quick reference data Table 1. Quick reference Symbol Parameter Conditions VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C ID drain current Tmb = 25 °C; VGS = 10 V; see Figure 1 and 3 Ptot total power dissipation Tmb = 25 °C; see Figure 2 Dynamic characteristics QGD gate-drain charge VGS = 10 V; ID = 18 A; VDS = 80 V; Tj = 25 °C; see Figure 11 Static characteristics RDSon drain-source on-state resistance VGS = 10 V; ID = 9 A; Tj = 25 °C; see Figure 9 and 10 Min Typ Max Unit - - 110 V - - 18 A - - 79 W - 8 - nC - 80 90 mΩ Nexperia 2. Pinning information Table 2. Pinning information Pin Symbol Description 1G gate 2D drain 3S source mb D mounting base; connected to drain PHP18NQ11T N-channel TrenchMOS standard level FET Simplified outline mb Graphic symbol D G mbb076 S 3. Ordering information 123 S...