PHP28NQ15T
N-channel TrenchMOS standard level FET
Rev. 02 — 22 March 2010
Product data sheet
1. Product profile
1.1 G...
PHP28NQ15T
N-channel TrenchMOS standard level FET
Rev. 02 — 22 March 2010
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel enhancement mode Field-Effect
Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.
1.2 Features and benefits
Increased efficiency during switching due to low body diode recovered charge
Suitable for high frequency applications due to fast switching characteristics
1.3 Applications
Class-D audio amplifiers DC-to-AC inverters
DC-to-DC convertors Switched-mode power supplies
1.4 Quick reference data
Table 1. Quick reference
Symbol Parameter
Conditions
VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C
ID drain current
Tj = 25 °C; VGS = 10 V; see Figure 1 and 3
Ptot total power dissipation
Tmb = 25 °C; see Figure 2
Dynamic characteristics
QGD
gate-drain charge
VGS = 10 V; ID = 10 A; VDS = 75 V; Tj = 25 °C; see Figure 12 and 11
Static characteristics
RDSon
drain-source
VGS = 10 V; ID = 18 A;
on-state resistance Tj = 25 °C; see Figure 9 and 10
Min Typ Max Unit - - 150 V - - 28.5 A - - 150 W
- 7.5 - nC
- 54 65 mΩ
Nexperia
2. Pinning information
Table 2. Pinning information
Pin Symbol Description
1G
gate
2D
drain
3S
source
mb D
mounting base; connected to drain
PHP28NQ15T
N-channel TrenchMOS standard level FET
Simplified outline
mb
Graphic symbo...