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PHP29N08T Dataheets PDF



Part Number PHP29N08T
Manufacturers nexperia
Logo nexperia
Description N-channel MOSFET
Datasheet PHP29N08T DatasheetPHP29N08T Datasheet (PDF)

PHP29N08T N-channel TrenchMOS standard level FET Rev. 02 — 12 March 2009 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features and benefits „ High noise immunity due to high gate threshold voltage „ Low conduction losses due to low o.

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PHP29N08T N-channel TrenchMOS standard level FET Rev. 02 — 12 March 2009 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features and benefits „ High noise immunity due to high gate threshold voltage „ Low conduction losses due to low on-state resistance 1.3 Applications „ Industrial motor control 1.4 Quick reference data Table 1. Quick reference Symbol VDS ID Parameter drain-source voltage drain current Conditions Tj ≥ 25 °C; Tj ≤ 175 °C Tmb = 25 °C; VGS = 11 V; see Figure 1; see Figure 3 Ptot total power dissipation Tmb = 25 °C; see Figure 2 Dynamic characteristics QGD gate-drain charge VGS = 10 V; ID = 29 A; VDS = 60 V; Tj = 25 °C; see Figure 11 Static characteristics RDSon drain-source on-state resistance VGS = 11 V; ID = 14 A; Tj = 175 °C; see Figure 9; see Figure 10 VGS = 11 V; ID = 14 A; Tj = 25 °C; see Figure 9; see Figure 10 Min Typ Max Unit - - 75 V - - 27 A - - 88 W - 9 - nC - 96 120 mΩ - 40 50 mΩ Nexperia 2. Pinning information Table 2. Pinning information Pin Symbol Description 1G gate 2D drain 3S source mb D mounting base, connected to drain PHP29N08T N-channel TrenchMOS standard level FET Simplified outline mb Graphic symbol D G mbb076 S 3. Ordering information 123 SOT78 (TO-220AB; SC-46) Table 3. Ordering information Type number Package Name Description PHP29N08T TO-220AB; plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead SC-46 TO-220AB Version SOT78 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VDS VDGR VGS ID Parameter drain-source voltage drain-gate voltage gate-source voltage drain current IDM peak drain current Ptot total power dissipation Tstg storage temperature Tj junction temperature Source-drain diode Conditions Tj ≥ 25 °C; Tj ≤ 175 °C Tj ≤ 175 °C; Tj ≥ 25 °C; RGS = 20 kΩ VGS = 11 V; Tmb = 100 °C; see Figure 1 VGS = 11 V; Tmb = 25 °C; see Figure 1; see Figure 3 tp ≤ 10 µs; pulsed; Tmb = 25 °C; see Figure 3 Tmb = 25 °C; see Figure 2 IS source current Tmb = 25 °C ISM peak source current tp ≤ 10 µs; pulsed; Tmb = 25 °C Min Max Unit - 75 V - 75 V -30 30 V - 19.2 A - 27 A - 108 A - 88 W -55 175 °C -55 175 °C - 27 A - 108 A PHP29N08T_2 Product data sheet Rev. 02 — 12 March 2009 2 of 12 © Nexperia B.V. 2017. All rights reserved Nexperia 120 Ider (%) 80 03aa24 PHP29N08T N-channel TrenchMOS standard level FET 120 Pder (%) 80 03aa16 40 40 0 0 50 100 150 200 Tmb (°C) 0 0 50 100 150 200 Tmb (°C) Fig 1. Normalized continuous drain current as a function of mounting base temperature 103 ID (A) 102 Limit RDSon = VDS/ID 10 1 1 DC 10 Fig 2. Normalized total power dissipation as a function of mounting base temperature 03aj06 tp = 10 μs 100 μs 1 ms 102 VDS (V) 103 Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage PHP29N08T_2 Product data sheet Rev. 02 — 12 March 2009 3 of 12 © Nexperia B.V. 2017. All rights reserved Nexperia PHP29N08T N-channel TrenchMOS standard level FET 5. Thermal characteristics Table 5. Symbol Rth(j-mb) Rth(j-a) Thermal characteristics Parameter Conditions thermal resistance from see Figure 4 junction to mounting base thermal resistance from vertical in still air junction to ambient Min Typ Max Unit - - 1.7 K/W - 60 - K/W 1 Zth(j-mb) (K/W) δ = 0.5 0.2 10−1 0.1 0.05 0.02 single pulse 03aj05 P δ = tp T 10−2 10−4 10−3 10−2 10−1 tp T tp (s) t 1 Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration PHP29N08T_2 Product data sheet Rev. 02 — 12 March 2009 4 of 12 © Nexperia B.V. 2017. All rights reserved Nexperia PHP29N08T N-channel TrenchMOS standard level FET 6. Characteristics Table 6. Characteristics Symbol Parameter Static characteristics V(BR)DSS drain-source breakdown voltage VGS(th) gate-source threshold voltage IDSS IGSS RDSon drain leakage current gate leakage current drain-source on-state resistance Dynamic characteristics QG(tot) QGS QGD Ciss Coss Crss total gate charge gate-source charge gate-drain charge input capacitance output capacitance reverse transfer capacitance td(on) turn-on delay time tr rise time td(off) turn-off delay time tf fall time Source-drain diode VSD source-drain voltage trr reverse recovery time Qr recovered charge Conditions ID = 0.25 mA; VGS = 0 V; Tj = -55 °C ID = 0.25 mA; VGS = 0 V; Tj = 25 °C ID = 2 mA; VDS = VGS; Tj = 175 °C; see Figure 8 ID = 2 mA; VDS = VGS; Tj = -55 °C; see Figure 8 ID = 2 mA; VDS = VGS; Tj = 25 °C; see Figure 8 VDS = 75 V; VGS = 0 V; Tj = 25 °C VDS = 75 V; VGS = 0 V; Tj = .


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