PHP33NQ20T

PHP33NQ20T N-channel TrenchMOS standard level FET Rev. 02 — 3 February 2009 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features and benefits „ Higher operating power due to low thermal resistance „ Low conduction losses due to low on-state resistance „ Simple gate drive required due to low gate charge „ Suitable for high frequency applications due to fast switching characteristics 1.3 Applications „ DC-to-DC convertors switching 1.4 Quick reference data Table 1. Quick reference Symbol Parameter Conditions VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C ID drain current Tmb = 25 °C; VGS = 10 V; see Figure 1; see Figure 3 Ptot total power dissipation Tmb = 25 °C; see Figure 2 Dynamic characteristics QGD gate-drain charge VGS = 10 V; ID = 25 A; VDS = 100 V; Tj = 25 °C; see Figure 11 Static characteristics RDSon drain-source on-state resistance VGS = 10 V; ID = 15 A; Tj = 25 °C; see Figure 9; see Figure 10 Min Typ Max Unit - - 200 V - - 32.7 A - - 230 W - 9.6 - nC - 65 77 mΩ Nexperia 2. Pinning information Table 2. Pinning information Pin Symbol Description 1G gate 2D drain 3S source mb D mounting base; connected to drain PHP33NQ20T N-channel TrenchMOS standard level FET Simplified ...